Abstract
Regarded as a promising absorber material for solar cell applications, Barium disilicide (BaSi2) is still confronted with issues related to surface oxidation. Here, we use a-Si.H deposited by plasma-enhanced chemical vapor deposition as capping layer to prevent surface oxidation of sputtered BaSi2 films. Based on crystalline quality and optical properties characterizations, thin a-Si.H capping cannot sufficiently prevent surface oxidation. Conversely, oxidation of a-Si.H layer in turn promotes Ba diffusion and Si isolation. Applying a thicker a-Si.H capping layer (more than 20 nm) can suppress such effect. The multi-materials capping layer can also be regarded as potential strategy to prevent surface oxidation of BaSi2.
Original language | English |
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Title of host publication | ASDAM 2018 - Proceedings |
Subtitle of host publication | 12th International Conference on Advanced Semiconductor Devices and Microsystems |
Editors | Daniel Donoval, Juraj Breza, Erik Vavrinsky |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Number of pages | 4 |
ISBN (Electronic) | 978-153867488-8 |
DOIs | |
Publication status | Published - 2018 |
Event | 12th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2018 - Smolenice, Slovakia Duration: 21 Oct 2018 → 24 Oct 2018 |
Conference
Conference | 12th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2018 |
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Country/Territory | Slovakia |
City | Smolenice |
Period | 21/10/18 → 24/10/18 |