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Effects of sintering pressure on the densification and mechanical properties of nanosilver double side sintered power module. / Zhang, Hao; Liu, Yang; Wang, Lingen; Sun, Fenglian; Fan, Jiajie; Placette, Mark D.; Fan, Xuejun; Zhang, Guoqi.

In: IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 9, No. 5, 8552388, 2019, p. 963-972.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Zhang, H, Liu, Y, Wang, L, Sun, F, Fan, J, Placette, MD, Fan, X & Zhang, G 2019, 'Effects of sintering pressure on the densification and mechanical properties of nanosilver double side sintered power module', IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 9, no. 5, 8552388, pp. 963-972. https://doi.org/10.1109/TCPMT.2018.2884032

APA

Zhang, H., Liu, Y., Wang, L., Sun, F., Fan, J., Placette, M. D., Fan, X., & Zhang, G. (2019). Effects of sintering pressure on the densification and mechanical properties of nanosilver double side sintered power module. IEEE Transactions on Components, Packaging and Manufacturing Technology, 9(5), 963-972. [8552388]. https://doi.org/10.1109/TCPMT.2018.2884032

Vancouver

Zhang H, Liu Y, Wang L, Sun F, Fan J, Placette MD et al. Effects of sintering pressure on the densification and mechanical properties of nanosilver double side sintered power module. IEEE Transactions on Components, Packaging and Manufacturing Technology. 2019;9(5):963-972. 8552388. https://doi.org/10.1109/TCPMT.2018.2884032

Author

Zhang, Hao ; Liu, Yang ; Wang, Lingen ; Sun, Fenglian ; Fan, Jiajie ; Placette, Mark D. ; Fan, Xuejun ; Zhang, Guoqi. / Effects of sintering pressure on the densification and mechanical properties of nanosilver double side sintered power module. In: IEEE Transactions on Components, Packaging and Manufacturing Technology. 2019 ; Vol. 9, No. 5. pp. 963-972.

BibTeX

@article{05c9fc08c81f4356857e48a27e7ec7f6,
title = "Effects of sintering pressure on the densification and mechanical properties of nanosilver double side sintered power module",
abstract = "Modern power electronics has the increased demands in current density and high-temperature reliability. However, these performance factors are limited due to the die attach materials used to affix power dies microchips to electric circuitry. Although several die attach materials and methods exist, nanosilver sintering technology has received much attention in attaching power dies due to its superior high-temperature reliability. This paper investigated the sintering properties of nanosilver film in double-side sintered power packages. X-ray diffraction results revealed that the size of nanosilver particles increased after pressure-free sintering. Compared with the pressure-free sintered nanosilver particles, the 5-MPa sintered particles showed a higher density. When increasing sintering pressure from 5 to 30 MPa, the shear strength of the sintered package increased from 8.71 to 86.26 MPa. When sintering at pressures below 20 MPa, the fracture areas are mainly located between the sintered Ag layer and the surface metallization layer on the fast recovery diode (FRD) die. The fracture occurs through the FRD die and the metallization layer on the bottom molybdenum substrate when sintering at 30 MPa.",
keywords = "Fracture, nanosilver sintering, power electronics, shear strength",
author = "Hao Zhang and Yang Liu and Lingen Wang and Fenglian Sun and Jiajie Fan and Placette, {Mark D.} and Xuejun Fan and Guoqi Zhang",
note = "Accepted author manuscript",
year = "2019",
doi = "10.1109/TCPMT.2018.2884032",
language = "English",
volume = "9",
pages = "963--972",
journal = "IEEE Transactions on Components, Packaging and Manufacturing Technology",
issn = "1521-3323",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
number = "5",

}

RIS

TY - JOUR

T1 - Effects of sintering pressure on the densification and mechanical properties of nanosilver double side sintered power module

AU - Zhang, Hao

AU - Liu, Yang

AU - Wang, Lingen

AU - Sun, Fenglian

AU - Fan, Jiajie

AU - Placette, Mark D.

AU - Fan, Xuejun

AU - Zhang, Guoqi

N1 - Accepted author manuscript

PY - 2019

Y1 - 2019

N2 - Modern power electronics has the increased demands in current density and high-temperature reliability. However, these performance factors are limited due to the die attach materials used to affix power dies microchips to electric circuitry. Although several die attach materials and methods exist, nanosilver sintering technology has received much attention in attaching power dies due to its superior high-temperature reliability. This paper investigated the sintering properties of nanosilver film in double-side sintered power packages. X-ray diffraction results revealed that the size of nanosilver particles increased after pressure-free sintering. Compared with the pressure-free sintered nanosilver particles, the 5-MPa sintered particles showed a higher density. When increasing sintering pressure from 5 to 30 MPa, the shear strength of the sintered package increased from 8.71 to 86.26 MPa. When sintering at pressures below 20 MPa, the fracture areas are mainly located between the sintered Ag layer and the surface metallization layer on the fast recovery diode (FRD) die. The fracture occurs through the FRD die and the metallization layer on the bottom molybdenum substrate when sintering at 30 MPa.

AB - Modern power electronics has the increased demands in current density and high-temperature reliability. However, these performance factors are limited due to the die attach materials used to affix power dies microchips to electric circuitry. Although several die attach materials and methods exist, nanosilver sintering technology has received much attention in attaching power dies due to its superior high-temperature reliability. This paper investigated the sintering properties of nanosilver film in double-side sintered power packages. X-ray diffraction results revealed that the size of nanosilver particles increased after pressure-free sintering. Compared with the pressure-free sintered nanosilver particles, the 5-MPa sintered particles showed a higher density. When increasing sintering pressure from 5 to 30 MPa, the shear strength of the sintered package increased from 8.71 to 86.26 MPa. When sintering at pressures below 20 MPa, the fracture areas are mainly located between the sintered Ag layer and the surface metallization layer on the fast recovery diode (FRD) die. The fracture occurs through the FRD die and the metallization layer on the bottom molybdenum substrate when sintering at 30 MPa.

KW - Fracture

KW - nanosilver sintering

KW - power electronics

KW - shear strength

UR - http://www.scopus.com/inward/record.url?scp=85057861728&partnerID=8YFLogxK

U2 - 10.1109/TCPMT.2018.2884032

DO - 10.1109/TCPMT.2018.2884032

M3 - Article

VL - 9

SP - 963

EP - 972

JO - IEEE Transactions on Components, Packaging and Manufacturing Technology

JF - IEEE Transactions on Components, Packaging and Manufacturing Technology

SN - 1521-3323

IS - 5

M1 - 8552388

ER -

ID: 49514288