Two-dimensional transition-metal dichalcogenides (TMDCs) such as MoS2 are potential channel materials for thin film transistor. Here, we report the effects of strain on the performance of the back-gated few-layer MoS2 thin film transistors (FL-MoS2 TFTs) with poly(acrylic acid) (PAA) dielectric layer. The devices exhibit high on/off ratio of 5600 and mobility of 7.07 cm/Vs. The electrical and optical characterizations were affected by the strain under bending conditions. The results show that the device exhibits quite stable mobility and photoswitching behavior under different bending radius, which is owing to the high deformability of MoS2 and PAA dielectric layer. Big bending radius enable improved photoresponsitivity due to the change of band gap of MoS2. The excellent bending performance of FL-MoS2 transistor presents potential applications in flexible and wearable electronics and optoelectronics.

Original languageEnglish
Title of host publication2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019
PublisherIEEE
Pages1-5
Number of pages5
ISBN (Electronic)978-1-5386-8040-7
ISBN (Print)978-1-5386-8041-4
DOIs
Publication statusPublished - 1 Mar 2019
Event20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019: 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems - Hannover, Germany
Duration: 24 Mar 201927 Mar 2019
Conference number: 20th

Conference

Conference20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019
CountryGermany
CityHannover
Period24/03/1927/03/19

    Research areas

  • MoS2, Optical, Strain, Thin film transistor (TFT)

ID: 57245784