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Electrochemical Modulation of the Photophysics of Surface-Localized Trap States in Core/Shell/(Shell) Quantum Dot Films. / Van Der Stam, Ward; Grimaldi, Gianluca; Geuchies, Jaco J.; Gudjonsdottir, Solrun; Van Uffelen, Pieter T.; Van Overeem, Mandy; Brynjarsson, Baldur; Kirkwood, Nicholas; Houtepen, Arjan J.

In: Chemistry of Materials, Vol. 31, No. 20, 2019, p. 8484-8493.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Van Der Stam, W, Grimaldi, G, Geuchies, JJ, Gudjonsdottir, S, Van Uffelen, PT, Van Overeem, M, Brynjarsson, B, Kirkwood, N & Houtepen, AJ 2019, 'Electrochemical Modulation of the Photophysics of Surface-Localized Trap States in Core/Shell/(Shell) Quantum Dot Films', Chemistry of Materials, vol. 31, no. 20, pp. 8484-8493. https://doi.org/10.1021/acs.chemmater.9b02908

APA

Van Der Stam, W., Grimaldi, G., Geuchies, J. J., Gudjonsdottir, S., Van Uffelen, P. T., Van Overeem, M., Brynjarsson, B., Kirkwood, N., & Houtepen, A. J. (2019). Electrochemical Modulation of the Photophysics of Surface-Localized Trap States in Core/Shell/(Shell) Quantum Dot Films. Chemistry of Materials, 31(20), 8484-8493. https://doi.org/10.1021/acs.chemmater.9b02908

Vancouver

Author

Van Der Stam, Ward ; Grimaldi, Gianluca ; Geuchies, Jaco J. ; Gudjonsdottir, Solrun ; Van Uffelen, Pieter T. ; Van Overeem, Mandy ; Brynjarsson, Baldur ; Kirkwood, Nicholas ; Houtepen, Arjan J. / Electrochemical Modulation of the Photophysics of Surface-Localized Trap States in Core/Shell/(Shell) Quantum Dot Films. In: Chemistry of Materials. 2019 ; Vol. 31, No. 20. pp. 8484-8493.

BibTeX

@article{512d26e087d74b26a2d78915a847ea13,
title = "Electrochemical Modulation of the Photophysics of Surface-Localized Trap States in Core/Shell/(Shell) Quantum Dot Films",
abstract = "In this work, we systematically study the spectroelectrochemical response of CdSe quantum dots (QDs), CdSe/CdS core/shell QDs with varying CdS shell thicknesses, and CdSe/CdS/ZnS core/shell/shell QDs in order to elucidate the influence of localized surface trap states on the optoelectronic properties. By correlating the differential absorbance and the photoluminescence upon electrochemically raising the Fermi level, we reveal that trap states near the conduction band (CB) edge give rise to nonradiative recombination pathways regardless of the CdS shell thickness, evidenced by quenching of the photoluminescence before the CB edge is populated with electrons. This points in the direction of shallow trap states localized on the CdS shell surface that give rise to nonradiative recombination pathways. We suggest that these shallow trap states reduce the quantum yield because of enhanced hole trapping when the Fermi level is raised electrochemically. We show that these shallow trap states are removed when additional wide band gap ZnS shells are grown around the CdSe/CdS core/shell QDs.",
author = "{Van Der Stam}, Ward and Gianluca Grimaldi and Geuchies, {Jaco J.} and Solrun Gudjonsdottir and {Van Uffelen}, {Pieter T.} and {Van Overeem}, Mandy and Baldur Brynjarsson and Nicholas Kirkwood and Houtepen, {Arjan J.}",
year = "2019",
doi = "10.1021/acs.chemmater.9b02908",
language = "English",
volume = "31",
pages = "8484--8493",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society (ACS)",
number = "20",

}

RIS

TY - JOUR

T1 - Electrochemical Modulation of the Photophysics of Surface-Localized Trap States in Core/Shell/(Shell) Quantum Dot Films

AU - Van Der Stam, Ward

AU - Grimaldi, Gianluca

AU - Geuchies, Jaco J.

AU - Gudjonsdottir, Solrun

AU - Van Uffelen, Pieter T.

AU - Van Overeem, Mandy

AU - Brynjarsson, Baldur

AU - Kirkwood, Nicholas

AU - Houtepen, Arjan J.

PY - 2019

Y1 - 2019

N2 - In this work, we systematically study the spectroelectrochemical response of CdSe quantum dots (QDs), CdSe/CdS core/shell QDs with varying CdS shell thicknesses, and CdSe/CdS/ZnS core/shell/shell QDs in order to elucidate the influence of localized surface trap states on the optoelectronic properties. By correlating the differential absorbance and the photoluminescence upon electrochemically raising the Fermi level, we reveal that trap states near the conduction band (CB) edge give rise to nonradiative recombination pathways regardless of the CdS shell thickness, evidenced by quenching of the photoluminescence before the CB edge is populated with electrons. This points in the direction of shallow trap states localized on the CdS shell surface that give rise to nonradiative recombination pathways. We suggest that these shallow trap states reduce the quantum yield because of enhanced hole trapping when the Fermi level is raised electrochemically. We show that these shallow trap states are removed when additional wide band gap ZnS shells are grown around the CdSe/CdS core/shell QDs.

AB - In this work, we systematically study the spectroelectrochemical response of CdSe quantum dots (QDs), CdSe/CdS core/shell QDs with varying CdS shell thicknesses, and CdSe/CdS/ZnS core/shell/shell QDs in order to elucidate the influence of localized surface trap states on the optoelectronic properties. By correlating the differential absorbance and the photoluminescence upon electrochemically raising the Fermi level, we reveal that trap states near the conduction band (CB) edge give rise to nonradiative recombination pathways regardless of the CdS shell thickness, evidenced by quenching of the photoluminescence before the CB edge is populated with electrons. This points in the direction of shallow trap states localized on the CdS shell surface that give rise to nonradiative recombination pathways. We suggest that these shallow trap states reduce the quantum yield because of enhanced hole trapping when the Fermi level is raised electrochemically. We show that these shallow trap states are removed when additional wide band gap ZnS shells are grown around the CdSe/CdS core/shell QDs.

UR - http://www.scopus.com/inward/record.url?scp=85073056706&partnerID=8YFLogxK

U2 - 10.1021/acs.chemmater.9b02908

DO - 10.1021/acs.chemmater.9b02908

M3 - Article

AN - SCOPUS:85073056706

VL - 31

SP - 8484

EP - 8493

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 20

ER -

ID: 62490141