Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells

Mike Ah Sen; Pierpaolo Spinelli; Benjamin Kikkert; Eelko Hoek; Bart Macco; Arthur Weeber; Paula Bronsveld

doi:10.1063/1.5049264

Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells

Mike Ah Sen, Pierpaolo Spinelli, Benjamin Kikkert, Eelko Hoek, Bart Macco, Arthur Weeber, Paula Bronsveld

Photovoltaic Materials and Devices

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

6 Citations (Scopus)

Abstract

Electron beam (E-beam) deposited molybdenum oxide (MoO_x) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoO_x/c-Si junction based device, reaching an average implied V_oc (iV_oc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoO_x as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoO_x-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoO_x and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoO_x deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions.

Original language	English
Title of host publication	SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics
Editors	Rolf Brendel, Jef Poortmans, Arthur Weeber, Giso Hahn, Christophe Ballif, Stefan Glunz, Pierre-Jean Ribeyron
Publisher	American Institute of Physics
Number of pages	5
Volume	1999
ISBN (Print)	978-0-7354-1715-1
DOIs	https://doi.org/10.1063/1.5049264
Publication status	Published - 2018
Event	SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics - Lausanne, Switzerland Duration: 19 Mar 2018 → 21 Mar 2018

Conference

Conference	SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics
Country/Territory	Switzerland
City	Lausanne
Period	19/03/18 → 21/03/18

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10.1063/1.5049264

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Ah Sen, M., Spinelli, P., Kikkert, B., Hoek, E., Macco, B., Weeber, A., & Bronsveld, P. (2018). Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells. In R. Brendel, J. Poortmans, A. Weeber, G. Hahn, C. Ballif, S. Glunz, & P.-J. Ribeyron (Eds.), SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics (Vol. 1999). Article 040001 American Institute of Physics. https://doi.org/10.1063/1.5049264

Ah Sen, Mike ; Spinelli, Pierpaolo ; Kikkert, Benjamin et al. / Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells. SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. editor / Rolf Brendel ; Jef Poortmans ; Arthur Weeber ; Giso Hahn ; Christophe Ballif ; Stefan Glunz ; Pierre-Jean Ribeyron. Vol. 1999 American Institute of Physics, 2018.

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title = "Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells",

abstract = "Electron beam (E-beam) deposited molybdenum oxide (MoOx) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoOx/c-Si junction based device, reaching an average implied Voc (iVoc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoOx as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoOx-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoOx and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoOx deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions.",

author = "{Ah Sen}, Mike and Pierpaolo Spinelli and Benjamin Kikkert and Eelko Hoek and Bart Macco and Arthur Weeber and Paula Bronsveld",

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editor = "Rolf Brendel and Jef Poortmans and Arthur Weeber and Giso Hahn and Christophe Ballif and Stefan Glunz and Pierre-Jean Ribeyron",

booktitle = "SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics",

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Ah Sen, M, Spinelli, P, Kikkert, B, Hoek, E, Macco, B, Weeber, A & Bronsveld, P 2018, Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells. in R Brendel, J Poortmans, A Weeber, G Hahn, C Ballif, S Glunz & P-J Ribeyron (eds), SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. vol. 1999, 040001, American Institute of Physics, SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics, Lausanne, Switzerland, 19/03/18. https://doi.org/10.1063/1.5049264

Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells. / Ah Sen, Mike; Spinelli, Pierpaolo; Kikkert, Benjamin et al.
SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. ed. / Rolf Brendel; Jef Poortmans; Arthur Weeber; Giso Hahn; Christophe Ballif; Stefan Glunz; Pierre-Jean Ribeyron. Vol. 1999 American Institute of Physics, 2018. 040001.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells

AU - Ah Sen, Mike

AU - Spinelli, Pierpaolo

AU - Kikkert, Benjamin

AU - Hoek, Eelko

AU - Macco, Bart

AU - Weeber, Arthur

AU - Bronsveld, Paula

PY - 2018

Y1 - 2018

N2 - Electron beam (E-beam) deposited molybdenum oxide (MoOx) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoOx/c-Si junction based device, reaching an average implied Voc (iVoc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoOx as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoOx-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoOx and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoOx deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions.

AB - Electron beam (E-beam) deposited molybdenum oxide (MoOx) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoOx/c-Si junction based device, reaching an average implied Voc (iVoc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoOx as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoOx-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoOx and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoOx deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions.

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M3 - Conference contribution

AN - SCOPUS:85051934540

SN - 978-0-7354-1715-1

VL - 1999

BT - SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics

A2 - Brendel, Rolf

A2 - Poortmans, Jef

A2 - Weeber, Arthur

A2 - Hahn, Giso

A2 - Ballif, Christophe

A2 - Glunz, Stefan

A2 - Ribeyron, Pierre-Jean

PB - American Institute of Physics

T2 - SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics

Y2 - 19 March 2018 through 21 March 2018

ER -

Ah Sen M, Spinelli P, Kikkert B, Hoek E, Macco B, Weeber A et al. Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells. In Brendel R, Poortmans J, Weeber A, Hahn G, Ballif C, Glunz S, Ribeyron PJ, editors, SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. Vol. 1999. American Institute of Physics. 2018. 040001 doi: 10.1063/1.5049264

Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells

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