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Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides. / Island, Joshua O.; Molina-Mendoza, Aday J.; Barawi, Mariam; Biele, Robert; Flores, Eduardo; Clamagirand, José M.; Ares, José R.; Sánchez, Carlos; Van Der Zant, Herre S.J.; D'Agosta, Roberto; Ferrer, Isabel J.; Castellanos-Gomez, Andres.

In: 2D Materials, Vol. 4, No. 2, 022003, 01.06.2017.

Research output: Contribution to journalReview articleScientificpeer-review

Harvard

Island, JO, Molina-Mendoza, AJ, Barawi, M, Biele, R, Flores, E, Clamagirand, JM, Ares, JR, Sánchez, C, Van Der Zant, HSJ, D'Agosta, R, Ferrer, IJ & Castellanos-Gomez, A 2017, 'Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides', 2D Materials, vol. 4, no. 2, 022003. https://doi.org/10.1088/2053-1583/aa6ca6

APA

Island, J. O., Molina-Mendoza, A. J., Barawi, M., Biele, R., Flores, E., Clamagirand, J. M., Ares, J. R., Sánchez, C., Van Der Zant, H. S. J., D'Agosta, R., Ferrer, I. J., & Castellanos-Gomez, A. (2017). Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides. 2D Materials, 4(2), [022003]. https://doi.org/10.1088/2053-1583/aa6ca6

Vancouver

Island JO, Molina-Mendoza AJ, Barawi M, Biele R, Flores E, Clamagirand JM et al. Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides. 2D Materials. 2017 Jun 1;4(2). 022003. https://doi.org/10.1088/2053-1583/aa6ca6

Author

Island, Joshua O. ; Molina-Mendoza, Aday J. ; Barawi, Mariam ; Biele, Robert ; Flores, Eduardo ; Clamagirand, José M. ; Ares, José R. ; Sánchez, Carlos ; Van Der Zant, Herre S.J. ; D'Agosta, Roberto ; Ferrer, Isabel J. ; Castellanos-Gomez, Andres. / Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides. In: 2D Materials. 2017 ; Vol. 4, No. 2.

BibTeX

@article{9956093493d34baaae36d819b86ea036,
title = "Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides",
abstract = "The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-1D transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-1D properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).",
keywords = "Anisotropy, Electronic band structure, Electronic devices, Growth and synthesis, Optoelectronic devices, TMTC, Transition metal trichalcogenides",
author = "Island, {Joshua O.} and Molina-Mendoza, {Aday J.} and Mariam Barawi and Robert Biele and Eduardo Flores and Clamagirand, {Jos{\'e} M.} and Ares, {Jos{\'e} R.} and Carlos S{\'a}nchez and {Van Der Zant}, {Herre S.J.} and Roberto D'Agosta and Ferrer, {Isabel J.} and Andres Castellanos-Gomez",
note = "Accepted Author Manuscript",
year = "2017",
month = jun,
day = "1",
doi = "10.1088/2053-1583/aa6ca6",
language = "English",
volume = "4",
journal = "2D Materials",
issn = "2053-1583",
publisher = "IOP Publishing",
number = "2",

}

RIS

TY - JOUR

T1 - Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

AU - Island, Joshua O.

AU - Molina-Mendoza, Aday J.

AU - Barawi, Mariam

AU - Biele, Robert

AU - Flores, Eduardo

AU - Clamagirand, José M.

AU - Ares, José R.

AU - Sánchez, Carlos

AU - Van Der Zant, Herre S.J.

AU - D'Agosta, Roberto

AU - Ferrer, Isabel J.

AU - Castellanos-Gomez, Andres

N1 - Accepted Author Manuscript

PY - 2017/6/1

Y1 - 2017/6/1

N2 - The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-1D transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-1D properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

AB - The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-1D transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-1D properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

KW - Anisotropy

KW - Electronic band structure

KW - Electronic devices

KW - Growth and synthesis

KW - Optoelectronic devices

KW - TMTC

KW - Transition metal trichalcogenides

UR - http://resolver.tudelft.nl/uuid:99560934-93d3-4baa-ae36-d819b86ea036

UR - http://www.scopus.com/inward/record.url?scp=85021132724&partnerID=8YFLogxK

U2 - 10.1088/2053-1583/aa6ca6

DO - 10.1088/2053-1583/aa6ca6

M3 - Review article

AN - SCOPUS:85021132724

VL - 4

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

IS - 2

M1 - 022003

ER -

ID: 37466009