TY - JOUR
T1 - Enhancing the Stability of the Electron Density in Electrochemically Doped ZnO Quantum Dots
AU - Gudjónsdóttir, Sólrún
AU - Houtepen, Arjan
AU - Koopman, Christel
PY - 2019
Y1 - 2019
N2 - Electronic doping of semiconductor nanomaterials can be efficiently achieved using electrochemistry. However, the injected charge carriers are usually not very stable. After disconnecting the cell that is used for electrochemical doping the carrier density drops, typically in several minutes. While there are multiple possible causes for this, we demonstrate here, using n-doped ZnO quantum-dot films of variable thickness that the dominant mechanism is reduction of solvent impurities by the injected electrons. We subsequently investigate two different ways to enhance the doping stability of ZnO QD films. The first method uses preemptive reduction of the solvent impurities; the second method involves a solid covering the QD film, which hinders impurity diffusion to the film. Both methods enhance the doping stability of the QD films greatly
AB - Electronic doping of semiconductor nanomaterials can be efficiently achieved using electrochemistry. However, the injected charge carriers are usually not very stable. After disconnecting the cell that is used for electrochemical doping the carrier density drops, typically in several minutes. While there are multiple possible causes for this, we demonstrate here, using n-doped ZnO quantum-dot films of variable thickness that the dominant mechanism is reduction of solvent impurities by the injected electrons. We subsequently investigate two different ways to enhance the doping stability of ZnO QD films. The first method uses preemptive reduction of the solvent impurities; the second method involves a solid covering the QD film, which hinders impurity diffusion to the film. Both methods enhance the doping stability of the QD films greatly
UR - http://www.scopus.com/inward/record.url?scp=85073421832&partnerID=8YFLogxK
U2 - 10.1063/1.5124534
DO - 10.1063/1.5124534
M3 - Article
SN - 0021-9606
VL - 151
JO - Journal of Chemical Physics
JF - Journal of Chemical Physics
IS - 14
M1 - 144708
ER -