TY - JOUR
T1 - General Considerations for Improving Photovoltage in Metal-Insulator-Semiconductor Photoanodes
AU - Digdaya, Ibadillah A.
AU - Trześniewski, Bartek J.
AU - Adhyaksa, Gede W.P.
AU - Garnett, E.C.
AU - Smith, Wilson A.
PY - 2018
Y1 - 2018
N2 - Metal-insulator-semiconductor (MIS) photoelectrodes offer a simple alternative to the traditional semiconductor-liquid junction and the conventional p-n junction electrode. Highly efficient MIS photoanodes require interfacial surface passivating oxides and high workfunction metals to produce a high photovoltage. Herein, we investigate and analyze the effect of interfacial oxides and metal workfunctions on the barrier height and the photovoltage of a c-Si photoanode. We use two metal components in a bimetal contact configuration and observe the modulation of the effective barrier height and the resulting photovoltage as a function of the secondary outer metal. The photovoltage shows a strong linear dependence by increasing the inner metal workfunction, with the highest photovoltage achieved by a MIS photoanode using a platinum inner metal. We also found that coupling a thin aluminium oxide with an interfacial silicon oxide and controlling the oxide thickness can significantly improve the photovoltage of an MIS junction photoanode.
AB - Metal-insulator-semiconductor (MIS) photoelectrodes offer a simple alternative to the traditional semiconductor-liquid junction and the conventional p-n junction electrode. Highly efficient MIS photoanodes require interfacial surface passivating oxides and high workfunction metals to produce a high photovoltage. Herein, we investigate and analyze the effect of interfacial oxides and metal workfunctions on the barrier height and the photovoltage of a c-Si photoanode. We use two metal components in a bimetal contact configuration and observe the modulation of the effective barrier height and the resulting photovoltage as a function of the secondary outer metal. The photovoltage shows a strong linear dependence by increasing the inner metal workfunction, with the highest photovoltage achieved by a MIS photoanode using a platinum inner metal. We also found that coupling a thin aluminium oxide with an interfacial silicon oxide and controlling the oxide thickness can significantly improve the photovoltage of an MIS junction photoanode.
UR - http://www.scopus.com/inward/record.url?scp=85044172942&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.7b11747
DO - 10.1021/acs.jpcc.7b11747
M3 - Article
AN - SCOPUS:85044172942
SN - 1932-7447
VL - 122
SP - 5462
EP - 5471
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 10
ER -