High Efficiency RF Power Amplifiers Featuring Package Integrated Load Insensitive Class-E Devices

Abdul Qureshi; Mustafa Acar; Sergio Pires; Leo de Vreede

doi:10.1109/MWSYM.2017.8059067

High Efficiency RF Power Amplifiers Featuring Package Integrated Load Insensitive Class-E Devices

Abdul Qureshi, Mustafa Acar, Sergio Pires, Leo de Vreede

Electronics

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

Abstract

Doherty and Mixed-mode outphasing RF power amplifiers (PAs) that make use of package integrated quasi-load insensitive (Pi-QLI) Class-E GaN transistors are presented. The package integrated harmonic terminations facilitate very simple and compact amplifier implementations. Using these proposed devices, a “Class-E” Doherty PA with 58.3% average efficiency and -49 dBc ACPR after linearization, as well as, a Mixed-mode “Class-E” outphasing PA with an average efficiency of 66.6% and -51.6 dBc ACPR, after linearization using a single carrier WCDMA, PAR=7dB at 2.14GHz, are presented.

Original language	English
Title of host publication	2017 IEEE MTT-S International Microwave Symposium (IMS)
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	2029 – 2032
Number of pages	4
ISBN (Electronic)	978-1-5090-6360-4
DOIs	https://doi.org/10.1109/MWSYM.2017.8059067
Publication status	Published - 2017
Event	IEEE MTT-S International Microwave Symposium, IMS 2017: Connecting Minds. Exchanging Ideas - Hawaii Convention Center, Honolulu, HI, United States Duration: 4 Jun 2017 → 9 Jun 2017 https://ims2017.org/

Conference

Conference	IEEE MTT-S International Microwave Symposium, IMS 2017
Abbreviated title	IMS 2017
Country/Territory	United States
City	Honolulu, HI
Period	4/06/17 → 9/06/17
Internet address	https://ims2017.org/

Keywords

High Efficiency
QLI Class-E
harmonic matching
Doherty PA
Mixed-mode outpasing

Access to Document

10.1109/MWSYM.2017.8059067

Cite this

@inproceedings{bafb1f59da9c4f208325f6176bf6c30b,

title = "High Efficiency RF Power Amplifiers Featuring Package Integrated Load Insensitive Class-E Devices",

abstract = "Doherty and Mixed-mode outphasing RF power amplifiers (PAs) that make use of package integrated quasi-load insensitive (Pi-QLI) Class-E GaN transistors are presented. The package integrated harmonic terminations facilitate very simple and compact amplifier implementations. Using these proposed devices, a “Class-E” Doherty PA with 58.3% average efficiency and -49 dBc ACPR after linearization, as well as, a Mixed-mode “Class-E” outphasing PA with an average efficiency of 66.6% and -51.6 dBc ACPR, after linearization using a single carrier WCDMA, PAR=7dB at 2.14GHz, are presented.",

keywords = "High Efficiency, QLI Class-E, harmonic matching, Doherty PA, Mixed-mode outpasing",

author = "Abdul Qureshi and Mustafa Acar and Sergio Pires and {de Vreede}, Leo",

year = "2017",

doi = "10.1109/MWSYM.2017.8059067",

language = "English",

pages = "2029 – 2032",

booktitle = "2017 IEEE MTT-S International Microwave Symposium (IMS)",

publisher = "IEEE",

address = "United States",

note = "IEEE MTT-S International Microwave Symposium, IMS 2017 : Connecting Minds. Exchanging Ideas, IMS 2017 ; Conference date: 04-06-2017 Through 09-06-2017",

url = "https://ims2017.org/",

}

Qureshi, A, Acar, M, Pires, S & de Vreede, L 2017, High Efficiency RF Power Amplifiers Featuring Package Integrated Load Insensitive Class-E Devices. in 2017 IEEE MTT-S International Microwave Symposium (IMS). IEEE, Piscataway, NJ, pp. 2029 – 2032, IEEE MTT-S International Microwave Symposium, IMS 2017, Honolulu, HI, United States, 4/06/17. https://doi.org/10.1109/MWSYM.2017.8059067

High Efficiency RF Power Amplifiers Featuring Package Integrated Load Insensitive Class-E Devices. / Qureshi, Abdul; Acar, Mustafa; Pires, Sergio et al.
2017 IEEE MTT-S International Microwave Symposium (IMS). Piscataway, NJ: IEEE, 2017. p. 2029 – 2032.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - High Efficiency RF Power Amplifiers Featuring Package Integrated Load Insensitive Class-E Devices

AU - Qureshi, Abdul

AU - Acar, Mustafa

AU - Pires, Sergio

AU - de Vreede, Leo

PY - 2017

Y1 - 2017

N2 - Doherty and Mixed-mode outphasing RF power amplifiers (PAs) that make use of package integrated quasi-load insensitive (Pi-QLI) Class-E GaN transistors are presented. The package integrated harmonic terminations facilitate very simple and compact amplifier implementations. Using these proposed devices, a “Class-E” Doherty PA with 58.3% average efficiency and -49 dBc ACPR after linearization, as well as, a Mixed-mode “Class-E” outphasing PA with an average efficiency of 66.6% and -51.6 dBc ACPR, after linearization using a single carrier WCDMA, PAR=7dB at 2.14GHz, are presented.

AB - Doherty and Mixed-mode outphasing RF power amplifiers (PAs) that make use of package integrated quasi-load insensitive (Pi-QLI) Class-E GaN transistors are presented. The package integrated harmonic terminations facilitate very simple and compact amplifier implementations. Using these proposed devices, a “Class-E” Doherty PA with 58.3% average efficiency and -49 dBc ACPR after linearization, as well as, a Mixed-mode “Class-E” outphasing PA with an average efficiency of 66.6% and -51.6 dBc ACPR, after linearization using a single carrier WCDMA, PAR=7dB at 2.14GHz, are presented.

KW - High Efficiency

KW - QLI Class-E

KW - harmonic matching

KW - Doherty PA

KW - Mixed-mode outpasing

U2 - 10.1109/MWSYM.2017.8059067

DO - 10.1109/MWSYM.2017.8059067

M3 - Conference contribution

SP - 2029

EP - 2032

BT - 2017 IEEE MTT-S International Microwave Symposium (IMS)

PB - IEEE

CY - Piscataway, NJ

T2 - IEEE MTT-S International Microwave Symposium, IMS 2017

Y2 - 4 June 2017 through 9 June 2017

ER -

High Efficiency RF Power Amplifiers Featuring Package Integrated Load Insensitive Class-E Devices

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this