High resolution reactive ion etching of GaN and etch-induced effects.

R Cheung, RJ Reeves, B Rong, SA Brown, EJM Fakkeldij, EWJM van der Drift, M Kamp

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	2759-2763
Number of pages	5
Journal	Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
Volume	17
Issue number	issue 6
Publication status	Published - 1999

Cite this

@article{41a70e6c079d4bf5aacb21d293f2adea,

title = "High resolution reactive ion etching of GaN and etch-induced effects.",

author = "R Cheung and RJ Reeves and B Rong and SA Brown and EJM Fakkeldij and {van der Drift}, EWJM and M Kamp",

year = "1999",

language = "Undefined/Unknown",

volume = "17",

pages = "2759--2763",

journal = "Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "issue 6",

}

TY - JOUR

T1 - High resolution reactive ion etching of GaN and etch-induced effects.

AU - Cheung, R

AU - Reeves, RJ

AU - Rong, B

AU - Brown, SA

AU - Fakkeldij, EJM

AU - van der Drift, EWJM

AU - Kamp, M

PY - 1999

Y1 - 1999

M3 - Article

SN - 1071-1023

VL - 17

SP - 2759

EP - 2763

JO - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

IS - issue 6

ER -