This article presents recent approaches for achieving high conversion efficiency of crystalline silicon solar cells at Delft University of Technology. The new approaches are based on heterojuction interfaces between the crystalline silicon (c-Si) absorber and carrier-selective passivating contact layers. We discuss silicon heterojunction solar cells with carrier-selective contact based on thin layers of hydrogenated amorphous silicon (a-Si: H) and on hydrogenated polycrystalline silicon (poly-Si) combined with a ultrathin silicon oxide layer. Both, the application of carrier-selective contacts in c-Si front-back contacted (FBC) and interdigitated back-contacted (IBC) solar cells with different thermal budgets are shown. The best performance was demonstrated with IBC c-Si solar cells with poly-Si carrier-selective passivating contacts with conversion efficiency η=23.0% and short-circuit current density JSC= 42.2 mAlcm2.

Original languageEnglish
Title of host publicationASDAM 2018 - Proceedings
Subtitle of host publication12th International Conference on Advanced Semiconductor Devices and Microsystems
EditorsDaniel Donoval, Juraj Breza, Erik Vavrinsky
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages6
ISBN (Electronic)9781538674888
DOIs
Publication statusPublished - 2018
Event12th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2018 - Smolenice, Slovakia
Duration: 21 Oct 201824 Oct 2018

Conference

Conference12th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2018
CountrySlovakia
CitySmolenice
Period21/10/1824/10/18

ID: 52026599