Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Robert Sokolovskij; Jian Zhang; Elina Iervolino; Changhui Zhao; Fabio Santagata; Fei Wang; Hongyu Yu; Pasqualina M. Sarro; Guo Qi Zhang

doi:10.1016/j.snb.2018.08.015

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Robert Sokolovskij, Jian Zhang, Elina Iervolino, Changhui Zhao, Fabio Santagata, Fei Wang, Hongyu Yu, Pasqualina M. Sarro, Guo Qi Zhang^*

^*Corresponding author for this work

Electronic Components, Technology and Materials

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Abstract

AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H₂S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal variation (ΔI_DS) of 2.17 and sensing response of 112% for 90 ppm H₂S in dry air as well as high stability across a wide range of biasing conditions. Transient response measurements demonstrated stable operation, superb response and recovery, with good repeatability. The measured sensing signal rise (fall) times reduced from 476 (1316) s to 219 (507) s when the temperature was increased from 200 °C to 250 °C. The response to 90 ppm H₂S was 4.5x larger than to H₂ and the device showed stable operation over an extended time period.

Original language	English
Pages (from-to)	636-644
Number of pages	9
Journal	Sensors and Actuators, B: Chemical
Volume	274
DOIs	https://doi.org/10.1016/j.snb.2018.08.015
Publication status	Published - 2018

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

2DEG
AlGaN/GaN
Gas sensor
HS
HEMT
Pt

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@article{016c7d542ab84e07b05570c54934bd64,

title = "Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor",

abstract = "AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H2S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal variation (ΔIDS) of 2.17 and sensing response of 112% for 90 ppm H2S in dry air as well as high stability across a wide range of biasing conditions. Transient response measurements demonstrated stable operation, superb response and recovery, with good repeatability. The measured sensing signal rise (fall) times reduced from 476 (1316) s to 219 (507) s when the temperature was increased from 200 °C to 250 °C. The response to 90 ppm H2S was 4.5x larger than to H2 and the device showed stable operation over an extended time period.",

keywords = "2DEG, AlGaN/GaN, Gas sensor, HS, HEMT, Pt",

author = "Robert Sokolovskij and Jian Zhang and Elina Iervolino and Changhui Zhao and Fabio Santagata and Fei Wang and Hongyu Yu and Sarro, {Pasqualina M.} and Zhang, {Guo Qi}",

note = "Green Open Access added to TU Delft Institutional Repository {\textquoteleft}You share, we take care!{\textquoteright} – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. ",

year = "2018",

doi = "10.1016/j.snb.2018.08.015",

language = "English",

volume = "274",

pages = "636--644",

journal = "Sensors and Actuators, B: Chemical",

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TY - JOUR

T1 - Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

AU - Sokolovskij, Robert

AU - Zhang, Jian

AU - Iervolino, Elina

AU - Zhao, Changhui

AU - Santagata, Fabio

AU - Wang, Fei

AU - Yu, Hongyu

AU - Sarro, Pasqualina M.

AU - Zhang, Guo Qi

N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2018

Y1 - 2018

N2 - AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H2S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal variation (ΔIDS) of 2.17 and sensing response of 112% for 90 ppm H2S in dry air as well as high stability across a wide range of biasing conditions. Transient response measurements demonstrated stable operation, superb response and recovery, with good repeatability. The measured sensing signal rise (fall) times reduced from 476 (1316) s to 219 (507) s when the temperature was increased from 200 °C to 250 °C. The response to 90 ppm H2S was 4.5x larger than to H2 and the device showed stable operation over an extended time period.

AB - AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H2S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal variation (ΔIDS) of 2.17 and sensing response of 112% for 90 ppm H2S in dry air as well as high stability across a wide range of biasing conditions. Transient response measurements demonstrated stable operation, superb response and recovery, with good repeatability. The measured sensing signal rise (fall) times reduced from 476 (1316) s to 219 (507) s when the temperature was increased from 200 °C to 250 °C. The response to 90 ppm H2S was 4.5x larger than to H2 and the device showed stable operation over an extended time period.

KW - 2DEG

KW - AlGaN/GaN

KW - Gas sensor

KW - HS

KW - HEMT

KW - Pt

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U2 - 10.1016/j.snb.2018.08.015

DO - 10.1016/j.snb.2018.08.015

M3 - Article

AN - SCOPUS:85051116360

SN - 0925-4005

VL - 274

SP - 636

EP - 644

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

ER -

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Abstract

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Keywords

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