In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation.

Original languageEnglish
Pages (from-to)138-143
Number of pages6
JournalSensors and Actuators, B: Chemical
Volume280
DOIs
Publication statusPublished - 2019

    Research areas

  • AlGaN/GaN, Gas sensor, H2S, HEMT, Pt

ID: 47248585