@inproceedings{702ddd15221341128a98da3476095b41,
title = "Influence of the Magnetic's parasitic capacitance in the switching of high-voltage cascode GaN HEMT",
abstract = "In this paper, the influence of the parasitic capacitance of a magnetic component (inductor or transformer) on the switching of 600V cascode GaN HEMT devices is investigated. An analytical switching model is used to analyse the influence and the results are verified by means of an experimental double pulse tester setup. Furthermore, the influence of replacing the diode of the switching cell with an active GaN HEMT switch is analysed in combination with the parasitic capacitance of the magnetic component.",
keywords = "Cascode configuration, Double-pulse tester (DPT), Gallium Nitride (GaN) high electron mobility transistor (HEMT), Parasitic capacitance",
author = "N. Galanos and J. Popovic and Ferreira, {J. A.} and M. Gerber",
year = "2019",
language = "English",
volume = "148",
series = "CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems",
publisher = "VDE Verlag GMBH",
booktitle = "CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems",
note = "9th International Conference on Integrated Power Electronics Systems, CIPS 2016 : 9th International Conference on Integrated Power Electronics Systems ; Conference date: 08-03-2016 Through 10-03-2016",
}