Documents

DOI

In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical
Coherence Tomography.
Original languageEnglish
Title of host publicationProceedings of Eurosensors 2017
Pages1-5
Number of pages5
DOIs
Publication statusPublished - 2017
EventEurosensors 2017: 31st Conference - Paris, France
Duration: 3 Sep 20176 Sep 2017
Conference number: 31
http://www.eurosensors2017.eu/

Publication series

NameProceedings
PublisherMDPI
Number4
Volume1
ISSN (Print)2504-3900

Conference

ConferenceEurosensors 2017
CountryFrance
CityParis
Period3/09/176/09/17
Internet address

    Research areas

  • Si photonics, SiGe detectors, optical coherence tomography

ID: 37694323