Integrated Waveguide Power Combiners with Artificial dielectrics for mm-Wave Systems

Zhebin Hu; Maria Alonso-delPino; Daniele Cavallo; Harshitha Thippur Shivamurthy; Marco Spirito

doi:10.1109/MWSYM.2017.8058652

Integrated Waveguide Power Combiners with Artificial dielectrics for mm-Wave Systems

Zhebin Hu, Maria Alonso-delPino, Daniele Cavallo, Harshitha Thippur Shivamurthy, Marco Spirito

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Abstract

In this contribution we present a new class of N:1 power combiner based on synthetic waveguides integrated in silicon technologies back-end-of-line. The input feeding is based on (N) E field probes employing capacitive resonance, feeding a waveguide with artificial dielectrics (ADs). The signal summation occurs on a single transverse plane, thus providing insertion losses which do not scale with the number of inputs. This results in a combiner more compact and without restriction in the number of inputs compared to the traditional power of two (2N) combiners. The power combiner operation is presented in a BiCMOS technology implementation and analyzed by means of full wave electromagnetic (EM) simulations. Finally, the experimental results of an integrated 4:1 back-to-back-combiner operating in the 240-310GHz band is presented and compared with the full EM model.

Original language	English
Title of host publication	2017 IEEE MTT-S International Microwave Symposium (IMS)
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	646-649
Number of pages	4
ISBN (Electronic)	978-1-5090-6360-4
DOIs	https://doi.org/10.1109/MWSYM.2017.8058652
Publication status	Published - 2017
Event	IEEE MTT-S International Microwave Symposium, IMS 2017: Connecting Minds. Exchanging Ideas - Hawaii Convention Center, Honolulu, HI, United States Duration: 4 Jun 2017 → 9 Jun 2017 https://ims2017.org/

Conference

Conference	IEEE MTT-S International Microwave Symposium, IMS 2017
Abbreviated title	IMS 2017
Country/Territory	United States
City	Honolulu, HI
Period	4/06/17 → 9/06/17
Internet address	https://ims2017.org/

Keywords

dielectric materials
elemental semiconductors
power combiners
silicon
waveguides
BiCMOS technology implementation
E field probes
N:1 power combiner
Si
artificial dielectrics
back-end-of-line
back-to-back-combiner operation
capacitive resonance
frequency 240.0 GHz to 310.0 GHz
full wave EM simulations
full-wave electromagnetic simulations
input feeding
insertion losses
integrated waveguide power combiners
mm-wave systems
power combiner operation
signal summation
silicon technologies
single transverse plane
synthetic waveguides
BiCMOS integrated circuits
Impedance
Pins
Power combiners
Probes
Prototypes
(sub)millimeter-wave
BiCMOS
Integrated circuit
artificial dielectric
power combiner
waveguide

Access to Document

10.1109/MWSYM.2017.8058652

Cite this

@inproceedings{a6ead3cf73da4da2be6c18626991c8e7,

title = "Integrated Waveguide Power Combiners with Artificial dielectrics for mm-Wave Systems",

abstract = "In this contribution we present a new class of N:1 power combiner based on synthetic waveguides integrated in silicon technologies back-end-of-line. The input feeding is based on (N) E field probes employing capacitive resonance, feeding a waveguide with artificial dielectrics (ADs). The signal summation occurs on a single transverse plane, thus providing insertion losses which do not scale with the number of inputs. This results in a combiner more compact and without restriction in the number of inputs compared to the traditional power of two (2N) combiners. The power combiner operation is presented in a BiCMOS technology implementation and analyzed by means of full wave electromagnetic (EM) simulations. Finally, the experimental results of an integrated 4:1 back-to-back-combiner operating in the 240-310GHz band is presented and compared with the full EM model.",

keywords = "dielectric materials, elemental semiconductors, power combiners, silicon, waveguides, BiCMOS technology implementation, E field probes, N:1 power combiner, Si, artificial dielectrics, back-end-of-line, back-to-back-combiner operation, capacitive resonance, frequency 240.0 GHz to 310.0 GHz, full wave EM simulations, full-wave electromagnetic simulations, input feeding, insertion losses, integrated waveguide power combiners, mm-wave systems, power combiner operation, signal summation, silicon technologies, single transverse plane, synthetic waveguides, BiCMOS integrated circuits, Impedance, Pins, Power combiners, Probes, Prototypes, (sub)millimeter-wave, BiCMOS, Integrated circuit, artificial dielectric, power combiner, waveguide",

author = "Zhebin Hu and Maria Alonso-delPino and Daniele Cavallo and {Thippur Shivamurthy}, Harshitha and Marco Spirito",

year = "2017",

doi = "10.1109/MWSYM.2017.8058652",

language = "English",

pages = "646--649",

booktitle = "2017 IEEE MTT-S International Microwave Symposium (IMS)",

publisher = "IEEE",

address = "United States",

note = "IEEE MTT-S International Microwave Symposium, IMS 2017 : Connecting Minds. Exchanging Ideas, IMS 2017 ; Conference date: 04-06-2017 Through 09-06-2017",

url = "https://ims2017.org/",

}

Hu, Z, Alonso-delPino, M , Cavallo, D, Thippur Shivamurthy, H & Spirito, M 2017, Integrated Waveguide Power Combiners with Artificial dielectrics for mm-Wave Systems. in 2017 IEEE MTT-S International Microwave Symposium (IMS). IEEE, Piscataway, NJ, pp. 646-649, IEEE MTT-S International Microwave Symposium, IMS 2017, Honolulu, HI, United States, 4/06/17. https://doi.org/10.1109/MWSYM.2017.8058652

Integrated Waveguide Power Combiners with Artificial dielectrics for mm-Wave Systems. / Hu, Zhebin; Alonso-delPino, Maria ; Cavallo, Daniele et al.
2017 IEEE MTT-S International Microwave Symposium (IMS). Piscataway, NJ: IEEE, 2017. p. 646-649.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Integrated Waveguide Power Combiners with Artificial dielectrics for mm-Wave Systems

AU - Hu, Zhebin

AU - Alonso-delPino, Maria

AU - Cavallo, Daniele

AU - Thippur Shivamurthy, Harshitha

AU - Spirito, Marco

PY - 2017

Y1 - 2017

N2 - In this contribution we present a new class of N:1 power combiner based on synthetic waveguides integrated in silicon technologies back-end-of-line. The input feeding is based on (N) E field probes employing capacitive resonance, feeding a waveguide with artificial dielectrics (ADs). The signal summation occurs on a single transverse plane, thus providing insertion losses which do not scale with the number of inputs. This results in a combiner more compact and without restriction in the number of inputs compared to the traditional power of two (2N) combiners. The power combiner operation is presented in a BiCMOS technology implementation and analyzed by means of full wave electromagnetic (EM) simulations. Finally, the experimental results of an integrated 4:1 back-to-back-combiner operating in the 240-310GHz band is presented and compared with the full EM model.

AB - In this contribution we present a new class of N:1 power combiner based on synthetic waveguides integrated in silicon technologies back-end-of-line. The input feeding is based on (N) E field probes employing capacitive resonance, feeding a waveguide with artificial dielectrics (ADs). The signal summation occurs on a single transverse plane, thus providing insertion losses which do not scale with the number of inputs. This results in a combiner more compact and without restriction in the number of inputs compared to the traditional power of two (2N) combiners. The power combiner operation is presented in a BiCMOS technology implementation and analyzed by means of full wave electromagnetic (EM) simulations. Finally, the experimental results of an integrated 4:1 back-to-back-combiner operating in the 240-310GHz band is presented and compared with the full EM model.

KW - dielectric materials

KW - elemental semiconductors

KW - power combiners

KW - silicon

KW - waveguides

KW - BiCMOS technology implementation

KW - E field probes

KW - N:1 power combiner

KW - Si

KW - artificial dielectrics

KW - back-end-of-line

KW - back-to-back-combiner operation

KW - capacitive resonance

KW - frequency 240.0 GHz to 310.0 GHz

KW - full wave EM simulations

KW - full-wave electromagnetic simulations

KW - input feeding

KW - insertion losses

KW - integrated waveguide power combiners

KW - mm-wave systems

KW - power combiner operation

KW - signal summation

KW - silicon technologies

KW - single transverse plane

KW - synthetic waveguides

KW - BiCMOS integrated circuits

KW - Impedance

KW - Pins

KW - Power combiners

KW - Probes

KW - Prototypes

KW - (sub)millimeter-wave

KW - BiCMOS

KW - Integrated circuit

KW - artificial dielectric

KW - power combiner

KW - waveguide

U2 - 10.1109/MWSYM.2017.8058652

DO - 10.1109/MWSYM.2017.8058652

M3 - Conference contribution

SP - 646

EP - 649

BT - 2017 IEEE MTT-S International Microwave Symposium (IMS)

PB - IEEE

CY - Piscataway, NJ

T2 - IEEE MTT-S International Microwave Symposium, IMS 2017

Y2 - 4 June 2017 through 9 June 2017

ER -

Integrated Waveguide Power Combiners with Artificial dielectrics for mm-Wave Systems

Abstract

Conference

Keywords

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