In this contribution we present a new class of N:1 power combiner based on synthetic waveguides integrated in silicon technologies back-end-of-line. The input feeding is based on (N) E field probes employing capacitive resonance, feeding a waveguide with artificial dielectrics (ADs). The signal summation occurs on a single transverse plane, thus providing insertion losses which do not scale with the number of inputs. This results in a combiner more compact and without restriction in the number of inputs compared to the traditional power of two (2N) combiners. The power combiner operation is presented in a BiCMOS technology implementation and analyzed by means of full wave electromagnetic (EM) simulations. Finally, the experimental results of an integrated 4:1 back-to-back-combiner operating in the 240-310GHz band is presented and compared with the full EM model.
Original languageEnglish
Title of host publication2017 IEEE MTT-S International Microwave Symposium (IMS)
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages646-649
Number of pages4
ISBN (Electronic)978-1-5090-6360-4
DOIs
Publication statusPublished - 2017
EventIEEE MTT-S International Microwave Symposium, IMS 2017: Connecting Minds. Exchanging Ideas - Hawaii Convention Center, Honolulu, HI, United States
Duration: 4 Jun 20179 Jun 2017
https://ims2017.org/

Conference

ConferenceIEEE MTT-S International Microwave Symposium, IMS 2017
Abbreviated titleIMS 2017
CountryUnited States
CityHonolulu, HI
Period4/06/179/06/17
Internet address

    Research areas

  • dielectric materials, elemental semiconductors, power combiners, silicon, waveguides, BiCMOS technology implementation, E field probes, N:1 power combiner, Si, artificial dielectrics, back-end-of-line, back-to-back-combiner operation, capacitive resonance, frequency 240.0 GHz to 310.0 GHz, full wave EM simulations, full-wave electromagnetic simulations, input feeding, insertion losses, integrated waveguide power combiners, mm-wave systems, power combiner operation, signal summation, silicon technologies, single transverse plane, synthetic waveguides, BiCMOS integrated circuits, Impedance, Pins, Power combiners, Probes, Prototypes, (sub)millimeter-wave, BiCMOS, Integrated circuit, artificial dielectric, power combiner, waveguide

ID: 37384726