Interfacial properties of Cu/SiO2 in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. The Cu and SiO2 are bonded by three types of chemical bonds, which cause three atomistic interfacial structures. The fracture of Cu-O and Cu-Si bonded interfaces occur at the interface, however, the fracture for Cu-OO interface occurs at copper layer near the interface, indicating two different fracture criterions coexist in Cu/SiO2 system.

Original languageEnglish
Title of host publication Proceedings - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages68-70
Number of pages3
ISBN (Electronic)978-1-5386-3712-8
DOIs
Publication statusPublished - 2018
EventEDTM 2018: 2nd Electron Devices Technology and Manufacturing (EDTM) Conference - Kobe, Japan
Duration: 13 Mar 201816 Mar 2018
Conference number: 2
http://ewh.ieee.org/conf/edtm/2018/

Conference

ConferenceEDTM 2018
CountryJapan
CityKobe
Period13/03/1816/03/18
Internet address

    Research areas

  • Load modeling, Loading, Substrates, Copper, Adhesives, Solid modeling, Computational modeling

ID: 46760510