Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages

Zhen Cui; Xianping Chen; Xuejun Fan; Guoqi Zhang

doi:10.1109/EuroSimE.2018.8369949

Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages

Zhen Cui, Xianping Chen, Xuejun Fan, Guoqi Zhang

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

136 Downloads (Pure)

Abstract

Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In this system, the Cu and SiO2 are bonded together by three types of chemical bonds, Cu-OO, Cu-O, and Cu-Si, which cause three atomistic interfacial structures. For Cu-O and Cu-Si bonded interfaces, the fracture occurs exactly at the interface, however, the fracture for Cu-OO bonded interface occurs at copper layer near the interface, which indicate two different fracture criterions coexist in Cu/SiO2 system. And, the calculated interfacial strength at macroscale is in agreement with available experimental results.

Original language	English
Title of host publication	2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Electronic)	978-1-5386-2359-6
DOIs	https://doi.org/10.1109/EuroSimE.2018.8369949
Publication status	Published - 2018
Event	EuroSimE 2018: 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems - Toulouse, France Duration: 15 Apr 2018 → 18 Apr 2018

Conference

Conference	EuroSimE 2018
Abbreviated title	EuroSimE 2018
Country/Territory	France
City	Toulouse
Period	15/04/18 → 18/04/18

Bibliographical note

Accepted author manuscript

Keywords

Load modeling
Loading
Copper
Substrates
Adhesives
Microelectronics
Finite element analysis

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10.1109/EuroSimE.2018.8369949

51124360 08369949Accepted author manuscript, 851 KB

Cite this

@inproceedings{1249b1bdbc66461eae4ce4d040331e54,

title = "Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages",

abstract = "Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In this system, the Cu and SiO2 are bonded together by three types of chemical bonds, Cu-OO, Cu-O, and Cu-Si, which cause three atomistic interfacial structures. For Cu-O and Cu-Si bonded interfaces, the fracture occurs exactly at the interface, however, the fracture for Cu-OO bonded interface occurs at copper layer near the interface, which indicate two different fracture criterions coexist in Cu/SiO2 system. And, the calculated interfacial strength at macroscale is in agreement with available experimental results.",

keywords = "Load modeling, Loading, Copper, Substrates, Adhesives, Microelectronics, Finite element analysis",

author = "Zhen Cui and Xianping Chen and Xuejun Fan and Guoqi Zhang",

note = "Accepted author manuscript; EuroSimE 2018 : 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018 ; Conference date: 15-04-2018 Through 18-04-2018",

year = "2018",

doi = "10.1109/EuroSimE.2018.8369949",

language = "English",

pages = "1--4",

booktitle = "2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018",

publisher = "IEEE",

address = "United States",

}

Cui, Z, Chen, X, Fan, X & Zhang, G 2018, Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages. in 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018. IEEE, Piscataway, NJ, pp. 1-4, EuroSimE 2018, Toulouse, France, 15/04/18. https://doi.org/10.1109/EuroSimE.2018.8369949

Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages. / Cui, Zhen; Chen, Xianping; Fan, Xuejun et al.
2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018. Piscataway, NJ: IEEE, 2018. p. 1-4.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages

AU - Cui, Zhen

AU - Chen, Xianping

AU - Fan, Xuejun

AU - Zhang, Guoqi

N1 - Accepted author manuscript

PY - 2018

Y1 - 2018

N2 - Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In this system, the Cu and SiO2 are bonded together by three types of chemical bonds, Cu-OO, Cu-O, and Cu-Si, which cause three atomistic interfacial structures. For Cu-O and Cu-Si bonded interfaces, the fracture occurs exactly at the interface, however, the fracture for Cu-OO bonded interface occurs at copper layer near the interface, which indicate two different fracture criterions coexist in Cu/SiO2 system. And, the calculated interfacial strength at macroscale is in agreement with available experimental results.

AB - Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In this system, the Cu and SiO2 are bonded together by three types of chemical bonds, Cu-OO, Cu-O, and Cu-Si, which cause three atomistic interfacial structures. For Cu-O and Cu-Si bonded interfaces, the fracture occurs exactly at the interface, however, the fracture for Cu-OO bonded interface occurs at copper layer near the interface, which indicate two different fracture criterions coexist in Cu/SiO2 system. And, the calculated interfacial strength at macroscale is in agreement with available experimental results.

KW - Load modeling

KW - Loading

KW - Copper

KW - Substrates

KW - Adhesives

KW - Microelectronics

KW - Finite element analysis

UR - http://www.scopus.com/inward/record.url?scp=85048858650&partnerID=8YFLogxK

U2 - 10.1109/EuroSimE.2018.8369949

DO - 10.1109/EuroSimE.2018.8369949

M3 - Conference contribution

AN - SCOPUS:85048858650

SP - 1

EP - 4

BT - 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018

PB - IEEE

CY - Piscataway, NJ

T2 - EuroSimE 2018

Y2 - 15 April 2018 through 18 April 2018

ER -

Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages

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Keywords

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