Documents

DOI

Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In this system, the Cu and SiO2 are bonded together by three types of chemical bonds, Cu-OO, Cu-O, and Cu-Si, which cause three atomistic interfacial structures. For Cu-O and Cu-Si bonded interfaces, the fracture occurs exactly at the interface, however, the fracture for Cu-OO bonded interface occurs at copper layer near the interface, which indicate two different fracture criterions coexist in Cu/SiO2 system. And, the calculated interfacial strength at macroscale is in agreement with available experimental results.

Original languageEnglish
Title of host publication2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages1-4
Number of pages4
ISBN (Electronic)978-1-5386-2359-6
DOIs
Publication statusPublished - 2018
EventEuroSimE 2018: 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems - Toulouse, France
Duration: 15 Apr 201818 Apr 2018

Conference

ConferenceEuroSimE 2018
Abbreviated titleEuroSimE 2018
CountryFrance
CityToulouse
Period15/04/1818/04/18

    Research areas

  • Load modeling, Loading, Copper, Substrates, Adhesives, Microelectronics, Finite element analysis

ID: 51124360