DOI

Using TCAD simulations, the silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET) is systematically investigated in this paper. The doping concentration (N FLI ), length (L), and position (D1) of floating islands are optimized according to breakdown voltage (BV), electric field distribution, and on-resistance. The results show that NFLI = 1 × 10 17 cm -3 , L = 2.5 μm, and D1 = 9.0 μm are superior values for FLI structure considering tradeoff between BV and on-resistance. With the same BV capacity, the on-resistance of SiC FLIMOSFET is decrease by 32% comparing to the conventional SiC VDMOSFET. Besides, the dynamic property shows 16.5% reduction of FoM R {on} cdot Q GD in the SiC FLIMOSFET. Significantly, comparing to the conventional structure, the electro-thermal simulation indicates that the SiC FLIMOSFET has a higher robustness under short-circuit condition owing to the reduction of thermal stress in SiC/SiO 2 interface. All the results show that the SiC FLIMOSFET has a good potential in SiC power device.

Original languageEnglish
Article number8674768
Pages (from-to)2295-2300
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number5
DOIs
Publication statusPublished - 2019

    Research areas

  • Breakdown voltage (BV), electro-thermal simulation, ON-resistance, silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET), TCAD

ID: 53837750