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Investigations of SiC VDMOSFET with Floating Island Structure Based on TCAD. / Luo, Hou Cai; Wang, Li Ming; Wang, Shao Gang; Tan, Chun Jian; Zheng, Kai; Zhang, Guo Qi; Tao, Lu Qi; Chen, Xian Ping.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 5, 8674768, 2019, p. 2295-2300.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Luo, HC, Wang, LM, Wang, SG, Tan, CJ, Zheng, K, Zhang, GQ, Tao, LQ & Chen, XP 2019, 'Investigations of SiC VDMOSFET with Floating Island Structure Based on TCAD', IEEE Transactions on Electron Devices, vol. 66, no. 5, 8674768, pp. 2295-2300. https://doi.org/10.1109/TED.2019.2900384

APA

Luo, H. C., Wang, L. M., Wang, S. G., Tan, C. J., Zheng, K., Zhang, G. Q., Tao, L. Q., & Chen, X. P. (2019). Investigations of SiC VDMOSFET with Floating Island Structure Based on TCAD. IEEE Transactions on Electron Devices, 66(5), 2295-2300. [8674768]. https://doi.org/10.1109/TED.2019.2900384

Vancouver

Luo HC, Wang LM, Wang SG, Tan CJ, Zheng K, Zhang GQ et al. Investigations of SiC VDMOSFET with Floating Island Structure Based on TCAD. IEEE Transactions on Electron Devices. 2019;66(5):2295-2300. 8674768. https://doi.org/10.1109/TED.2019.2900384

Author

Luo, Hou Cai ; Wang, Li Ming ; Wang, Shao Gang ; Tan, Chun Jian ; Zheng, Kai ; Zhang, Guo Qi ; Tao, Lu Qi ; Chen, Xian Ping. / Investigations of SiC VDMOSFET with Floating Island Structure Based on TCAD. In: IEEE Transactions on Electron Devices. 2019 ; Vol. 66, No. 5. pp. 2295-2300.

BibTeX

@article{537891de6ee845e08cce0d8b1e9dd31c,
title = "Investigations of SiC VDMOSFET with Floating Island Structure Based on TCAD",
abstract = " Using TCAD simulations, the silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET) is systematically investigated in this paper. The doping concentration (N FLI ), length (L), and position (D1) of floating islands are optimized according to breakdown voltage (BV), electric field distribution, and on-resistance. The results show that NFLI = 1 × 10 17 cm -3 , L = 2.5 μm, and D1 = 9.0 μm are superior values for FLI structure considering tradeoff between BV and on-resistance. With the same BV capacity, the on-resistance of SiC FLIMOSFET is decrease by 32% comparing to the conventional SiC VDMOSFET. Besides, the dynamic property shows 16.5% reduction of FoM R {on} cdot Q GD in the SiC FLIMOSFET. Significantly, comparing to the conventional structure, the electro-thermal simulation indicates that the SiC FLIMOSFET has a higher robustness under short-circuit condition owing to the reduction of thermal stress in SiC/SiO 2 interface. All the results show that the SiC FLIMOSFET has a good potential in SiC power device. ",
keywords = "Breakdown voltage (BV), electro-thermal simulation, ON-resistance, silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET), TCAD",
author = "Luo, {Hou Cai} and Wang, {Li Ming} and Wang, {Shao Gang} and Tan, {Chun Jian} and Kai Zheng and Zhang, {Guo Qi} and Tao, {Lu Qi} and Chen, {Xian Ping}",
year = "2019",
doi = "10.1109/TED.2019.2900384",
language = "English",
volume = "66",
pages = "2295--2300",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
number = "5",

}

RIS

TY - JOUR

T1 - Investigations of SiC VDMOSFET with Floating Island Structure Based on TCAD

AU - Luo, Hou Cai

AU - Wang, Li Ming

AU - Wang, Shao Gang

AU - Tan, Chun Jian

AU - Zheng, Kai

AU - Zhang, Guo Qi

AU - Tao, Lu Qi

AU - Chen, Xian Ping

PY - 2019

Y1 - 2019

N2 - Using TCAD simulations, the silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET) is systematically investigated in this paper. The doping concentration (N FLI ), length (L), and position (D1) of floating islands are optimized according to breakdown voltage (BV), electric field distribution, and on-resistance. The results show that NFLI = 1 × 10 17 cm -3 , L = 2.5 μm, and D1 = 9.0 μm are superior values for FLI structure considering tradeoff between BV and on-resistance. With the same BV capacity, the on-resistance of SiC FLIMOSFET is decrease by 32% comparing to the conventional SiC VDMOSFET. Besides, the dynamic property shows 16.5% reduction of FoM R {on} cdot Q GD in the SiC FLIMOSFET. Significantly, comparing to the conventional structure, the electro-thermal simulation indicates that the SiC FLIMOSFET has a higher robustness under short-circuit condition owing to the reduction of thermal stress in SiC/SiO 2 interface. All the results show that the SiC FLIMOSFET has a good potential in SiC power device.

AB - Using TCAD simulations, the silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET) is systematically investigated in this paper. The doping concentration (N FLI ), length (L), and position (D1) of floating islands are optimized according to breakdown voltage (BV), electric field distribution, and on-resistance. The results show that NFLI = 1 × 10 17 cm -3 , L = 2.5 μm, and D1 = 9.0 μm are superior values for FLI structure considering tradeoff between BV and on-resistance. With the same BV capacity, the on-resistance of SiC FLIMOSFET is decrease by 32% comparing to the conventional SiC VDMOSFET. Besides, the dynamic property shows 16.5% reduction of FoM R {on} cdot Q GD in the SiC FLIMOSFET. Significantly, comparing to the conventional structure, the electro-thermal simulation indicates that the SiC FLIMOSFET has a higher robustness under short-circuit condition owing to the reduction of thermal stress in SiC/SiO 2 interface. All the results show that the SiC FLIMOSFET has a good potential in SiC power device.

KW - Breakdown voltage (BV)

KW - electro-thermal simulation

KW - ON-resistance

KW - silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET)

KW - TCAD

UR - http://www.scopus.com/inward/record.url?scp=85065149877&partnerID=8YFLogxK

U2 - 10.1109/TED.2019.2900384

DO - 10.1109/TED.2019.2900384

M3 - Article

AN - SCOPUS:85065149877

VL - 66

SP - 2295

EP - 2300

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 5

M1 - 8674768

ER -

ID: 53837750