Kinetics and Crystal orientation dependence in High Aspect Ratio Silicon Dry Etching.

MA Blauw, T Zijlstra, RA Bakker, EWJM van der Drift

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	3453-3461
Number of pages	9
Journal	Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
Volume	18
Issue number	6
Publication status	Published - 2000

Keywords

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title = "Kinetics and Crystal orientation dependence in High Aspect Ratio Silicon Dry Etching.",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "MA Blauw and T Zijlstra and RA Bakker and {van der Drift}, EWJM",

year = "2000",

language = "Undefined/Unknown",

volume = "18",

pages = "3453--3461",

journal = "Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Kinetics and Crystal orientation dependence in High Aspect Ratio Silicon Dry Etching.

AU - Blauw, MA

AU - Zijlstra, T

AU - Bakker, RA

AU - van der Drift, EWJM

PY - 2000

Y1 - 2000

KW - ZX Int.klas.verslagjaar < 2002

M3 - Article

SN - 1071-1023

VL - 18

SP - 3453

EP - 3461

JO - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

IS - 6

ER -