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Light-Induced Effects on the a-Si : H/c-Si Heterointerface. / Vasudevan, Ravi; Poli, Isabella; Deligiannis, Dimitrios; Zeman, Miro; Smets, Arno H.M.

In: IEEE Journal of Photovoltaics, Vol. 7, No. 2, 7786911, 16.12.2016, p. 656-664.

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Vasudevan, Ravi ; Poli, Isabella ; Deligiannis, Dimitrios ; Zeman, Miro ; Smets, Arno H.M. / Light-Induced Effects on the a-Si : H/c-Si Heterointerface. In: IEEE Journal of Photovoltaics. 2016 ; Vol. 7, No. 2. pp. 656-664.

BibTeX

@article{9dc89b86b55445938f17cd83db6b8633,
title = "Light-Induced Effects on the a-Si: H/c-Si Heterointerface",
abstract = "Light-induced effects on the minority carrier lifetime of silicon heterojunction structures are studied through multiple-exposure photoconductance decay (MEPCD). MEPCD monitors the effect of the measurement flash from a photoconductance decay setup on a sample over thousands of measurements. Varying the microstructure of the intrinsic hydrogenated amorphous silicon (a-Si:H) used for passivation of n-Type crystalline silicon (c-Si) showed that passivating films rich in voids produce light-induced improvement, while denser films result in samples that are susceptible to light-induced degradation. Light-induced degradation is linked to an increase in dangling bond density at the a-Si:H/c-Si interface, while light-induced improvements are linked to charging at the a-Si:H/c-Si interface. Furthermore, doped a-Si:H is added to make samples with an emitter and back surface field (BSF). These doped layers have a significant effect on the light-induced kinetics on minority carrier lifetime. Emitter samples exhibit consistent light-induced improvement, while BSF samples exhibit light-induced degradation. This is explained through negative charging at the BSF and positive charging at the emitter. Full precursors with a BSF and emitter exhibit different kinetics based on which side is being illuminated. This suggests that the light-induced charging at the a-Si:H/c-Si interface can only occur when a-Si:H has sufficient generation.",
keywords = "Hydrogenated amorphous silicon (a-Si:H), light-induced degradation (LID), silicon heterojunction (SHJ)",
author = "Ravi Vasudevan and Isabella Poli and Dimitrios Deligiannis and Miro Zeman and Smets, {Arno H.M.}",
year = "2016",
month = "12",
day = "16",
doi = "10.1109/JPHOTOV.2016.2633800",
language = "English",
volume = "7",
pages = "656--664",
journal = "IEEE Journal of Photovoltaics",
issn = "2156-3381",
publisher = "IEEE",
number = "2",

}

RIS

TY - JOUR

T1 - Light-Induced Effects on the a-Si

T2 - IEEE Journal of Photovoltaics

AU - Vasudevan, Ravi

AU - Poli, Isabella

AU - Deligiannis, Dimitrios

AU - Zeman, Miro

AU - Smets, Arno H.M.

PY - 2016/12/16

Y1 - 2016/12/16

N2 - Light-induced effects on the minority carrier lifetime of silicon heterojunction structures are studied through multiple-exposure photoconductance decay (MEPCD). MEPCD monitors the effect of the measurement flash from a photoconductance decay setup on a sample over thousands of measurements. Varying the microstructure of the intrinsic hydrogenated amorphous silicon (a-Si:H) used for passivation of n-Type crystalline silicon (c-Si) showed that passivating films rich in voids produce light-induced improvement, while denser films result in samples that are susceptible to light-induced degradation. Light-induced degradation is linked to an increase in dangling bond density at the a-Si:H/c-Si interface, while light-induced improvements are linked to charging at the a-Si:H/c-Si interface. Furthermore, doped a-Si:H is added to make samples with an emitter and back surface field (BSF). These doped layers have a significant effect on the light-induced kinetics on minority carrier lifetime. Emitter samples exhibit consistent light-induced improvement, while BSF samples exhibit light-induced degradation. This is explained through negative charging at the BSF and positive charging at the emitter. Full precursors with a BSF and emitter exhibit different kinetics based on which side is being illuminated. This suggests that the light-induced charging at the a-Si:H/c-Si interface can only occur when a-Si:H has sufficient generation.

AB - Light-induced effects on the minority carrier lifetime of silicon heterojunction structures are studied through multiple-exposure photoconductance decay (MEPCD). MEPCD monitors the effect of the measurement flash from a photoconductance decay setup on a sample over thousands of measurements. Varying the microstructure of the intrinsic hydrogenated amorphous silicon (a-Si:H) used for passivation of n-Type crystalline silicon (c-Si) showed that passivating films rich in voids produce light-induced improvement, while denser films result in samples that are susceptible to light-induced degradation. Light-induced degradation is linked to an increase in dangling bond density at the a-Si:H/c-Si interface, while light-induced improvements are linked to charging at the a-Si:H/c-Si interface. Furthermore, doped a-Si:H is added to make samples with an emitter and back surface field (BSF). These doped layers have a significant effect on the light-induced kinetics on minority carrier lifetime. Emitter samples exhibit consistent light-induced improvement, while BSF samples exhibit light-induced degradation. This is explained through negative charging at the BSF and positive charging at the emitter. Full precursors with a BSF and emitter exhibit different kinetics based on which side is being illuminated. This suggests that the light-induced charging at the a-Si:H/c-Si interface can only occur when a-Si:H has sufficient generation.

KW - Hydrogenated amorphous silicon (a-Si:H)

KW - light-induced degradation (LID)

KW - silicon heterojunction (SHJ)

UR - http://www.scopus.com/inward/record.url?scp=85007390508&partnerID=8YFLogxK

UR - http://resolver.tudelft.nl/uuid:9dc89b86-b554-4593-8f17-cd83db6b8633

U2 - 10.1109/JPHOTOV.2016.2633800

DO - 10.1109/JPHOTOV.2016.2633800

M3 - Article

VL - 7

SP - 656

EP - 664

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

SN - 2156-3381

IS - 2

M1 - 7786911

ER -

ID: 27772777