Original language | Undefined/Unknown |
---|---|
Pages (from-to) | 4611-4615 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 82 |
Publication status | Published - 1997 |
Low temperature gateoxide process for n-channel SiGe Modulation Doped Field Effect Transistors
B Bozon, T Zijlstra, M Glueck, J Hersener, EWJM van der Drift, U König
Research output: Contribution to journal › Article › Scientific › peer-review
4
Citations
(Scopus)