Measuring plastic deformation in epitaxial silicon after thermal oxidation

K. V. Sweers; P. R. Kuppens; N. Tolou

doi:10.1109/MARSS.2019.8860984

Measuring plastic deformation in epitaxial silicon after thermal oxidation

K. V. Sweers, P. R. Kuppens, N. Tolou

Mechatronic Systems Design

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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Abstract

Residual stress from thermal oxidation can cause plastic deformation in silicon microelectromechanical systems (MEMS). This paper presents a novel method to distinguish elastic and plastic strain in silicon beams, by removing the oxide layer to show the plastic strain. A lever mechanism is used as a mechanical amplifier. The plasticity model by Alexander and Haassen (AH) is used in a numerical model to predict the elastic and plastic strain. Experiments in epitaxially grown silicon show significantly less plastic strain than predicted by the model. We conclude that the AH model is not valid for epitaxially grown silicon with very little initial dislocations. Since epitaxially grown silicon generally has less dislocations compared to floating zone silicon we recommend using the former when plastic deformation is to be avoided.

Original language	English
Title of host publication	Proceedings of MARSS 2019
Subtitle of host publication	4th International Conference on Manipulation, Automation, and Robotics at Small Scales
Editors	Sinan Haliyo, Albert Sill, Quan Zhou, Pasi Kallio, Sergej Fatikow
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Number of pages	8
ISBN (Electronic)	978-1-7281-0947-3
ISBN (Print)	978-1-7281-0948-0
DOIs	https://doi.org/10.1109/MARSS.2019.8860984
Publication status	Published - 2019
Event	4th International Conference on Manipulation, Automation, and Robotics at Small Scales, MARSS 2019 - Aalto University, Helsinki, Finland Duration: 1 Jul 2019 → 5 Jul 2019 https://marss-conference.org/

Conference

Conference	4th International Conference on Manipulation, Automation, and Robotics at Small Scales, MARSS 2019
Abbreviated title	MARSS 2019
Country/Territory	Finland
City	Helsinki
Period	1/07/19 → 5/07/19
Internet address	https://marss-conference.org/

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care

Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

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08860984Final published version, 1.08 MB

Cite this

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title = "Measuring plastic deformation in epitaxial silicon after thermal oxidation",

abstract = "Residual stress from thermal oxidation can cause plastic deformation in silicon microelectromechanical systems (MEMS). This paper presents a novel method to distinguish elastic and plastic strain in silicon beams, by removing the oxide layer to show the plastic strain. A lever mechanism is used as a mechanical amplifier. The plasticity model by Alexander and Haassen (AH) is used in a numerical model to predict the elastic and plastic strain. Experiments in epitaxially grown silicon show significantly less plastic strain than predicted by the model. We conclude that the AH model is not valid for epitaxially grown silicon with very little initial dislocations. Since epitaxially grown silicon generally has less dislocations compared to floating zone silicon we recommend using the former when plastic deformation is to be avoided.",

author = "Sweers, {K. V.} and Kuppens, {P. R.} and N. Tolou",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 4th International Conference on Manipulation, Automation, and Robotics at Small Scales, MARSS 2019, MARSS 2019 ; Conference date: 01-07-2019 Through 05-07-2019",

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doi = "10.1109/MARSS.2019.8860984",

language = "English",

isbn = "978-1-7281-0948-0",

editor = "Sinan Haliyo and Albert Sill and Quan Zhou and Pasi Kallio and Sergej Fatikow",

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publisher = "IEEE",

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url = "https://marss-conference.org/",

}

Sweers, KV, Kuppens, PR & Tolou, N 2019, Measuring plastic deformation in epitaxial silicon after thermal oxidation. in S Haliyo, A Sill, Q Zhou, P Kallio & S Fatikow (eds), Proceedings of MARSS 2019: 4th International Conference on Manipulation, Automation, and Robotics at Small Scales. IEEE, Piscataway, NJ, USA, 4th International Conference on Manipulation, Automation, and Robotics at Small Scales, MARSS 2019, Helsinki, Finland, 1/07/19. https://doi.org/10.1109/MARSS.2019.8860984

Measuring plastic deformation in epitaxial silicon after thermal oxidation. / Sweers, K. V.; Kuppens, P. R.; Tolou, N.
Proceedings of MARSS 2019: 4th International Conference on Manipulation, Automation, and Robotics at Small Scales. ed. / Sinan Haliyo; Albert Sill; Quan Zhou; Pasi Kallio; Sergej Fatikow. Piscataway, NJ, USA: IEEE, 2019.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Measuring plastic deformation in epitaxial silicon after thermal oxidation

AU - Sweers, K. V.

AU - Kuppens, P. R.

AU - Tolou, N.

N1 - Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2019

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N2 - Residual stress from thermal oxidation can cause plastic deformation in silicon microelectromechanical systems (MEMS). This paper presents a novel method to distinguish elastic and plastic strain in silicon beams, by removing the oxide layer to show the plastic strain. A lever mechanism is used as a mechanical amplifier. The plasticity model by Alexander and Haassen (AH) is used in a numerical model to predict the elastic and plastic strain. Experiments in epitaxially grown silicon show significantly less plastic strain than predicted by the model. We conclude that the AH model is not valid for epitaxially grown silicon with very little initial dislocations. Since epitaxially grown silicon generally has less dislocations compared to floating zone silicon we recommend using the former when plastic deformation is to be avoided.

AB - Residual stress from thermal oxidation can cause plastic deformation in silicon microelectromechanical systems (MEMS). This paper presents a novel method to distinguish elastic and plastic strain in silicon beams, by removing the oxide layer to show the plastic strain. A lever mechanism is used as a mechanical amplifier. The plasticity model by Alexander and Haassen (AH) is used in a numerical model to predict the elastic and plastic strain. Experiments in epitaxially grown silicon show significantly less plastic strain than predicted by the model. We conclude that the AH model is not valid for epitaxially grown silicon with very little initial dislocations. Since epitaxially grown silicon generally has less dislocations compared to floating zone silicon we recommend using the former when plastic deformation is to be avoided.

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A2 - Kallio, Pasi

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ER -

Measuring plastic deformation in epitaxial silicon after thermal oxidation

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