Microstructure analysis of n-doped ¿c-SiOx:H reflector layers and their implementation in stable a-Si:H p-i-n junctions

P Babal; J Blanker; RA Vasudevan; AHM Smets; M Zeman

doi:10.1109/PVSC.2012.6317627

Microstructure analysis of n-doped ¿c-SiOx:H reflector layers and their implementation in stable a-Si:H p-i-n junctions

P Babal, J Blanker, RA Vasudevan, AHM Smets, M Zeman

Photovoltaic Materials and Devices

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

6 Citations (Scopus)

Original language	English
Title of host publication	Proceedings 2012 38th IEEE Photovoltaic Specialists Conference
Editors	BJ Stanbery
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE Society
Pages	321-326
Number of pages	6
ISBN (Print)	978-1-4673-0066-7/12
DOIs	https://doi.org/10.1109/PVSC.2012.6317627
Publication status	Published - 2012
Event	PVSC 2012: 38th IEEE Photovoltaic Specialists Conference - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012 Conference number: 38

Publication series

Name
Publisher	IEEE

Conference

Conference	PVSC 2012
Abbreviated title	IEEE PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	3/06/12 → 8/06/12

Bibliographical note

Harvest
Article number: 6317627

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2012.6317627

Cite this

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title = "Microstructure analysis of n-doped ¿c-SiOx:H reflector layers and their implementation in stable a-Si:H p-i-n junctions",

author = "P Babal and J Blanker and RA Vasudevan and AHM Smets and M Zeman",

note = "Harvest Article number: 6317627; PVSC 2012 : 38th IEEE Photovoltaic Specialists Conference , IEEE PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

year = "2012",

doi = "10.1109/PVSC.2012.6317627",

language = "English",

isbn = "978-1-4673-0066-7/12",

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editor = "BJ Stanbery",

booktitle = "Proceedings 2012 38th IEEE Photovoltaic Specialists Conference",

}

Babal, P, Blanker, J, Vasudevan, RA, Smets, AHM & Zeman, M 2012, Microstructure analysis of n-doped ¿c-SiOx:H reflector layers and their implementation in stable a-Si:H p-i-n junctions. in BJ Stanbery (ed.), Proceedings 2012 38th IEEE Photovoltaic Specialists Conference. IEEE Society, Piscataway, NJ, USA, pp. 321-326, PVSC 2012, Austin, TX, United States, 3/06/12. https://doi.org/10.1109/PVSC.2012.6317627

Microstructure analysis of n-doped ¿c-SiOx:H reflector layers and their implementation in stable a-Si:H p-i-n junctions. / Babal, P; Blanker, J; Vasudevan, RA et al.
Proceedings 2012 38th IEEE Photovoltaic Specialists Conference. ed. / BJ Stanbery. Piscataway, NJ, USA: IEEE Society, 2012. p. 321-326.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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AU - Babal, P

AU - Blanker, J

AU - Vasudevan, RA

AU - Smets, AHM

AU - Zeman, M

N1 - Conference code: 38

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EP - 326

BT - Proceedings 2012 38th IEEE Photovoltaic Specialists Conference

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CY - Piscataway, NJ, USA

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