We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS3) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.

Original languageEnglish
Article number015009
Number of pages7
Journal2D Materials
Issue number1
Publication statusPublished - 2019

    Research areas

  • charge density wave, electronic transport, semiconductors, titanium trisulfide

ID: 71719190