Multi-terminal electronic transport in boron nitride encapsulated TiS3 nanosheets

Nikos Papadopoulos; Eduardo Flores; Kenji Watanabe; Takashi Taniguchi; Jose R. Ares; Carlos Sanchez; Isabel J. Ferrer; Andres Castellanos-Gomez; Gary A. Steele; Herre S.J. Van Der Zant

doi:10.1088/2053-1583/ab4ef3

Multi-terminal electronic transport in boron nitride encapsulated TiS₃ nanosheets

Nikos Papadopoulos, Eduardo Flores, Kenji Watanabe, Takashi Taniguchi, Jose R. Ares, Carlos Sanchez, Isabel J. Ferrer, Andres Castellanos-Gomez, Gary A. Steele, Herre S.J. Van Der Zant

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

17 Downloads (Pure)

Abstract

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS₃) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.

Original language	English
Article number	015009
Number of pages	7
Journal	2D Materials
Volume	7
Issue number	1
DOIs	https://doi.org/10.1088/2053-1583/ab4ef3
Publication status	Published - 2019

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

charge density wave
electronic transport
semiconductors
titanium trisulfide

Access to Document

10.1088/2053-1583/ab4ef3

Papadopoulos_2020_2D_Mater._7_015009taverneFinal published version, 1.61 MB

Cite this

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title = "Multi-terminal electronic transport in boron nitride encapsulated TiS3 nanosheets",

abstract = "We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS3) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.",

keywords = "charge density wave, electronic transport, semiconductors, titanium trisulfide",

author = "Nikos Papadopoulos and Eduardo Flores and Kenji Watanabe and Takashi Taniguchi and Ares, {Jose R.} and Carlos Sanchez and Ferrer, {Isabel J.} and Andres Castellanos-Gomez and Steele, {Gary A.} and {Van Der Zant}, {Herre S.J.}",

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doi = "10.1088/2053-1583/ab4ef3",

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T1 - Multi-terminal electronic transport in boron nitride encapsulated TiS3 nanosheets

AU - Papadopoulos, Nikos

AU - Flores, Eduardo

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Ares, Jose R.

AU - Sanchez, Carlos

AU - Ferrer, Isabel J.

AU - Castellanos-Gomez, Andres

AU - Steele, Gary A.

AU - Van Der Zant, Herre S.J.

N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2019

Y1 - 2019

N2 - We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS3) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.

AB - We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS3) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.

KW - charge density wave

KW - electronic transport

KW - semiconductors

KW - titanium trisulfide

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