Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

K Nishiguchi; A Castellanos-Gomez; H Yamaguchi; A Fujiwara; HSJ van der Zant; GA Steele

doi:10.1063/1.4927529

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

K Nishiguchi, A Castellanos-Gomez, H Yamaguchi, A Fujiwara, HSJ van der Zant, GA Steele

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Letters
Volume	107
Issue number	5
DOIs	https://doi.org/10.1063/1.4927529
Publication status	Published - 2015

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10.1063/1.4927529

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title = "Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode",

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AU - Yamaguchi, H

AU - Fujiwara, A

AU - van der Zant, HSJ

AU - Steele, GA

N1 - Harvest

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Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

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