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On Basic Boolean Function Graphene Nanoribbon Conductance Mapping. / Jiang, Yande; Laurenciu, Nicoleta Cucu; Cotofana, Sorin Dan.

In: IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 66, No. 5, 8574057, 2019, p. 1948-1959.

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Harvard

Jiang, Y, Laurenciu, NC & Cotofana, SD 2019, 'On Basic Boolean Function Graphene Nanoribbon Conductance Mapping' IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 66, no. 5, 8574057, pp. 1948-1959. https://doi.org/10.1109/TCSI.2018.2882310

APA

Vancouver

Jiang Y, Laurenciu NC, Cotofana SD. On Basic Boolean Function Graphene Nanoribbon Conductance Mapping. IEEE Transactions on Circuits and Systems I: Regular Papers. 2019;66(5):1948-1959. 8574057. https://doi.org/10.1109/TCSI.2018.2882310

Author

Jiang, Yande ; Laurenciu, Nicoleta Cucu ; Cotofana, Sorin Dan. / On Basic Boolean Function Graphene Nanoribbon Conductance Mapping. In: IEEE Transactions on Circuits and Systems I: Regular Papers. 2019 ; Vol. 66, No. 5. pp. 1948-1959.

BibTeX

@article{9355af4328c94d1da26386f3c8fb78bc,
title = "On Basic Boolean Function Graphene Nanoribbon Conductance Mapping",
abstract = "In this paper, we augment a trapezoidal Quantum Point Contact topology with top gates to form a butterfly Graphene Nanoribbon (GNR) structure and demonstrate that by adjusting its topology, its conductance map can mirror basic Boolean functions, thus one can use such structures instead of transistors to build carbon-based gates and circuits. We first identify by means of Design Space Exploration specific GNR topologies for 2- and 3-input {AND, NAND, OR, NOR, XOR, XNOR} and demonstrate by means of the Non-Equilibrium Green Function - Landauer based simulations that butterfly GNR-based structures operating at V DD = 0.2 V outperform 7 nm @ V DD = 0.7 V CMOS counterparts by 2 to 3, 1 to 2, and 3 to 4, orders of magnitude in terms of delay, power consumption, and power-delay product, respectively, while requiring 2 orders of magnitude less active area. Subsequently, we investigate the effect of V DD variations and the V DD value lower bound. We demonstrate that the NOR butterfly GNR structures are quite robust as their conductance and delay are changing by no more than 2{\%} and 6{\%}, respectively, and that AND and NOR GNR geometries can operate even at 10 mV. Finally, we consider the aspects related to the practical realization of the proposed structures and conclude that even if there are still hurdles on the road ahead the latest graphene fabrication technology developments, e.g., surface-assisted synthesis, our proposal opens an alternative towards effective carbon-based nanoelectronic circuits and applications.",
keywords = "carbon-nanoelectronics., GNR, Graphene, graphene-based Boolean Gates",
author = "Yande Jiang and Laurenciu, {Nicoleta Cucu} and Cotofana, {Sorin Dan}",
note = "Accepted Author Manuscript",
year = "2019",
doi = "10.1109/TCSI.2018.2882310",
language = "English",
volume = "66",
pages = "1948--1959",
journal = "IEEE Transactions on Circuits and Systems Part 1: Regular Papers",
issn = "1549-8328",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - On Basic Boolean Function Graphene Nanoribbon Conductance Mapping

AU - Jiang, Yande

AU - Laurenciu, Nicoleta Cucu

AU - Cotofana, Sorin Dan

N1 - Accepted Author Manuscript

PY - 2019

Y1 - 2019

N2 - In this paper, we augment a trapezoidal Quantum Point Contact topology with top gates to form a butterfly Graphene Nanoribbon (GNR) structure and demonstrate that by adjusting its topology, its conductance map can mirror basic Boolean functions, thus one can use such structures instead of transistors to build carbon-based gates and circuits. We first identify by means of Design Space Exploration specific GNR topologies for 2- and 3-input {AND, NAND, OR, NOR, XOR, XNOR} and demonstrate by means of the Non-Equilibrium Green Function - Landauer based simulations that butterfly GNR-based structures operating at V DD = 0.2 V outperform 7 nm @ V DD = 0.7 V CMOS counterparts by 2 to 3, 1 to 2, and 3 to 4, orders of magnitude in terms of delay, power consumption, and power-delay product, respectively, while requiring 2 orders of magnitude less active area. Subsequently, we investigate the effect of V DD variations and the V DD value lower bound. We demonstrate that the NOR butterfly GNR structures are quite robust as their conductance and delay are changing by no more than 2% and 6%, respectively, and that AND and NOR GNR geometries can operate even at 10 mV. Finally, we consider the aspects related to the practical realization of the proposed structures and conclude that even if there are still hurdles on the road ahead the latest graphene fabrication technology developments, e.g., surface-assisted synthesis, our proposal opens an alternative towards effective carbon-based nanoelectronic circuits and applications.

AB - In this paper, we augment a trapezoidal Quantum Point Contact topology with top gates to form a butterfly Graphene Nanoribbon (GNR) structure and demonstrate that by adjusting its topology, its conductance map can mirror basic Boolean functions, thus one can use such structures instead of transistors to build carbon-based gates and circuits. We first identify by means of Design Space Exploration specific GNR topologies for 2- and 3-input {AND, NAND, OR, NOR, XOR, XNOR} and demonstrate by means of the Non-Equilibrium Green Function - Landauer based simulations that butterfly GNR-based structures operating at V DD = 0.2 V outperform 7 nm @ V DD = 0.7 V CMOS counterparts by 2 to 3, 1 to 2, and 3 to 4, orders of magnitude in terms of delay, power consumption, and power-delay product, respectively, while requiring 2 orders of magnitude less active area. Subsequently, we investigate the effect of V DD variations and the V DD value lower bound. We demonstrate that the NOR butterfly GNR structures are quite robust as their conductance and delay are changing by no more than 2% and 6%, respectively, and that AND and NOR GNR geometries can operate even at 10 mV. Finally, we consider the aspects related to the practical realization of the proposed structures and conclude that even if there are still hurdles on the road ahead the latest graphene fabrication technology developments, e.g., surface-assisted synthesis, our proposal opens an alternative towards effective carbon-based nanoelectronic circuits and applications.

KW - carbon-nanoelectronics.

KW - GNR

KW - Graphene

KW - graphene-based Boolean Gates

UR - http://www.scopus.com/inward/record.url?scp=85058627327&partnerID=8YFLogxK

U2 - 10.1109/TCSI.2018.2882310

DO - 10.1109/TCSI.2018.2882310

M3 - Article

VL - 66

SP - 1948

EP - 1959

JO - IEEE Transactions on Circuits and Systems Part 1: Regular Papers

T2 - IEEE Transactions on Circuits and Systems Part 1: Regular Papers

JF - IEEE Transactions on Circuits and Systems Part 1: Regular Papers

SN - 1549-8328

IS - 5

M1 - 8574057

ER -

ID: 48097514