We present a non-destructive measurement and simple analysis method for obtaining the absorption coefficient of silicon nanocrystals (NCs) embedded in an amorphous matrix. This method enables us to pinpoint the contribution of silicon NCs to the absorption spectrum of NC containing films. The density of states (DOS) of the amorphous matrix is modelled using the standard model for amorphous silicon while the NCs are modelled using one Gaussian distribution for the occupied states and one for the unoccupied states. For laser annealed a-Si0.66O0.34:H films, our analysis shows a reduction of the NC band gap from approximately 2.34–2.08 eV indicating larger mean NC size for increasing annealing laser fluences, accompanied by a reduction in NC DOS distribution width from 0.28–0.26 eV, indicating a narrower size distribution.
Original languageEnglish
Article number325302
Pages (from-to)1-9
Number of pages9
JournalJournal of Physics D: Applied Physics
Issue number32
Publication statusPublished - 10 Jul 2015

    Research areas

  • silicon nanocrystals, density of states, photothermal deflection spectroscopy

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