TY - JOUR
T1 - Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics
AU - Sun, Yue
AU - Kang, Xuanwu
AU - Zheng, Yingkui
AU - Wei, Ke
AU - Li, Pengfei
AU - Wang, Wenbo
AU - Liu, Xinyu
AU - Zhang, Guoqi
PY - 2020
Y1 - 2020
N2 - The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic profile of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10−8 A/cm2 at −10 V.
AB - The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic profile of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10−8 A/cm2 at −10 V.
KW - Dry etch
KW - GaN
KW - Inductively coupled plasma (ICP)
KW - Mesa
KW - Quasi-vertical
KW - Schottky barrier diode (SBD)
KW - Sidewall profile
UR - http://www.scopus.com/inward/record.url?scp=85083191406&partnerID=8YFLogxK
U2 - 10.3390/nano10040657
DO - 10.3390/nano10040657
M3 - Article
AN - SCOPUS:85083191406
SN - 2079-4991
VL - 10
SP - 1
EP - 13
JO - Nanomaterials
JF - Nanomaterials
IS - 4
M1 - 657
ER -