Pattern Shifting Analyses of Micro-structures of IC Package

Y He; R Shi; HP Li; F Li; GQ Zhang; LJ Ernst

Pattern Shifting Analyses of Micro-structures of IC Package

Y He, R Shi, HP Li, F Li, GQ Zhang, LJ Ernst

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

Pattern shift is one of the main failures of micro-electronics. In this paper, the influence of plastic deformation values of micro-structures of IC packages on the pattern shift of metal lines is studied by maximum plastic strain theory using a certain 2D FEM model with different design parameters, "d", "w", "t_epo", "t_Teos", "t_glue" "sy_glue" and "sy_al". For different critical process steps, the final process temperature is acted as a representative parameter to analyze its impact. Furthermore, Response Surface Model (RSM) of plastic strains is established using any two design parameters. Results show that "w", "t_epo", "t_Teos", "t_glue" "sy_glue" and "sy_al" will have different influence on pattern shifting while "d" have little impact.

Original language	Undefined/Unknown
Pages (from-to)	1333-1338
Number of pages	6
Journal	Key Engineering Materials
Volume	340-341
Publication status	Published - 2007

Keywords

academic journal papers
CWTS JFIS < 0.75

Cite this

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title = "Pattern Shifting Analyses of Micro-structures of IC Package",

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author = "Y He and R Shi and HP Li and F Li and GQ Zhang and LJ Ernst",

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TY - JOUR

T1 - Pattern Shifting Analyses of Micro-structures of IC Package

AU - He, Y

AU - Shi, R

AU - Li, HP

AU - Li, F

AU - Zhang, GQ

AU - Ernst, LJ

PY - 2007

Y1 - 2007

N2 - Pattern shift is one of the main failures of micro-electronics. In this paper, the influence of plastic deformation values of micro-structures of IC packages on the pattern shift of metal lines is studied by maximum plastic strain theory using a certain 2D FEM model with different design parameters, "d", "w", "t_epo", "t_Teos", "t_glue" "sy_glue" and "sy_al". For different critical process steps, the final process temperature is acted as a representative parameter to analyze its impact. Furthermore, Response Surface Model (RSM) of plastic strains is established using any two design parameters. Results show that "w", "t_epo", "t_Teos", "t_glue" "sy_glue" and "sy_al" will have different influence on pattern shifting while "d" have little impact.

AB - Pattern shift is one of the main failures of micro-electronics. In this paper, the influence of plastic deformation values of micro-structures of IC packages on the pattern shift of metal lines is studied by maximum plastic strain theory using a certain 2D FEM model with different design parameters, "d", "w", "t_epo", "t_Teos", "t_glue" "sy_glue" and "sy_al". For different critical process steps, the final process temperature is acted as a representative parameter to analyze its impact. Furthermore, Response Surface Model (RSM) of plastic strains is established using any two design parameters. Results show that "w", "t_epo", "t_Teos", "t_glue" "sy_glue" and "sy_al" will have different influence on pattern shifting while "d" have little impact.

KW - academic journal papers

KW - CWTS JFIS < 0.75

UR - http://www.scientific.net

M3 - Article

SN - 1013-9826

VL - 340-341

SP - 1333

EP - 1338

JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Pattern Shifting Analyses of Micro-structures of IC Package

Abstract

Keywords

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