Abstract
The ability to predict angle-resolved light scattering characteristics of surface features, including particle contaminants and circuit structures, is identified as an important tool for the development of next generation wafer inspection systems. A model and associated code based on the coupled-dipole method used to model the light scattering is described. Then, predicted scattering signatures for polystyrene latex spheres and silicon dioxide features (nominal 1 micrometer size) on smooth silicon surfaces are reported. The surface features of interest were from the ASU/SRC block of the SEMATECH Patterned Wafer Defect Standard die developed by VLSI Standards, Inc. Finally, the computational results are compared with scattering measurements from individual particles and features. A coherent beam incident of the features on the surface had a wavelength of 632.8 nm, 7 mm beam spot size, and was at an incident angle of 45 degrees. A ringed photodetector centered on the specular reflection was used to measure the angle-resolved scatter. Over the range of scattering angles studied (10 degrees to 60 degrees), the results for differential scattering cross-section agreed to within a factor of 3 or 4.
Original language | English |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | Susan K. Jones |
Pages | 690-697 |
Number of pages | 8 |
Volume | 2725 |
Publication status | Published - 1 Jan 1996 |
Externally published | Yes |
Event | Metrology, Inspection, and Process Control for Microlithography X - Santa Clara, CA, USA Duration: 11 Mar 1996 → 13 Mar 1996 |
Conference
Conference | Metrology, Inspection, and Process Control for Microlithography X |
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City | Santa Clara, CA, USA |
Period | 11/03/96 → 13/03/96 |