Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Robert Sokolovskij; Elina Iervolino; Changhui Zhao; Fei Wang; Hongyu Yu; Fabio Santagata; Pasqualina M. Sarro; Guo Qi Zhang

doi:10.1109/ICSENS.2017.8234419

Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Robert Sokolovskij, Elina Iervolino, Changhui Zhao, Fei Wang, Hongyu Yu, Fabio Santagata, Pasqualina M. Sarro, Guo Qi Zhang

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

10 Citations (Scopus)

264 Downloads (Pure)

Abstract

This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios W_g/L_g from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient response are directly related to the sensor gate electrode W_g/L_g ratio. The obtained results demonstrated a 217 % increase in sensitivity and 4630 % increase in sensing current variation at 500 ppm H2 for a W_g/L_g from 0.25 to 10. In addition, the detection limit was lowered to 5 ppm. Transient characteristics demonstrated faster sensor response to H2, but slower recovery rates with increasing ratio.

Original language	English
Title of host publication	Proceedings of IEEE Sensors Conference 2017
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	1-3
Number of pages	3
ISBN (Electronic)	978-1-5090-1012-7
ISBN (Print)	978-1-5090-1013-4
DOIs	https://doi.org/10.1109/ICSENS.2017.8234419
Publication status	Published - 2017
Event	IEEE SENSORS 2017 - Glasgow, United Kingdom Duration: 29 Oct 2017 → 1 Nov 2017 http://ieee-sensors2017.org/

Conference

Conference	IEEE SENSORS 2017
Country/Territory	United Kingdom
City	Glasgow
Period	29/10/17 → 1/11/17
Internet address	http://ieee-sensors2017.org/

Bibliographical note

Accepted author manuscript

Keywords

AlGaN
GaN
H2 sensor
HEMT
high temperature
sensor layout

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10.1109/ICSENS.2017.8234419

44904642 - HEMT_Sens_H2_gateWL_RS-final_submited_SUSTC_SKL (2)Accepted author manuscript, 298 KB

Cite this

@inproceedings{b2fd8457c1e848078a37cecb72173273,

title = "Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection",

abstract = "This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios Wg/Lg from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient response are directly related to the sensor gate electrode Wg/Lg ratio. The obtained results demonstrated a 217 % increase in sensitivity and 4630 % increase in sensing current variation at 500 ppm H2 for a Wg/Lg from 0.25 to 10. In addition, the detection limit was lowered to 5 ppm. Transient characteristics demonstrated faster sensor response to H2, but slower recovery rates with increasing ratio.",

keywords = "AlGaN, GaN, H2 sensor, HEMT, high temperature, sensor layout",

author = "Robert Sokolovskij and Elina Iervolino and Changhui Zhao and Fei Wang and Hongyu Yu and Fabio Santagata and Sarro, {Pasqualina M.} and Zhang, {Guo Qi}",

note = "Accepted author manuscript; IEEE SENSORS 2017 ; Conference date: 29-10-2017 Through 01-11-2017",

year = "2017",

doi = "10.1109/ICSENS.2017.8234419",

language = "English",

isbn = "978-1-5090-1013-4",

pages = "1--3",

booktitle = "Proceedings of IEEE Sensors Conference 2017",

publisher = "IEEE",

address = "United States",

url = "http://ieee-sensors2017.org/",

}

TY - GEN

T1 - Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

AU - Sokolovskij, Robert

AU - Iervolino, Elina

AU - Zhao, Changhui

AU - Wang, Fei

AU - Yu, Hongyu

AU - Santagata, Fabio

AU - Sarro, Pasqualina M.

AU - Zhang, Guo Qi

N1 - Accepted author manuscript

PY - 2017

Y1 - 2017

N2 - This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios Wg/Lg from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient response are directly related to the sensor gate electrode Wg/Lg ratio. The obtained results demonstrated a 217 % increase in sensitivity and 4630 % increase in sensing current variation at 500 ppm H2 for a Wg/Lg from 0.25 to 10. In addition, the detection limit was lowered to 5 ppm. Transient characteristics demonstrated faster sensor response to H2, but slower recovery rates with increasing ratio.

AB - This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios Wg/Lg from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient response are directly related to the sensor gate electrode Wg/Lg ratio. The obtained results demonstrated a 217 % increase in sensitivity and 4630 % increase in sensing current variation at 500 ppm H2 for a Wg/Lg from 0.25 to 10. In addition, the detection limit was lowered to 5 ppm. Transient characteristics demonstrated faster sensor response to H2, but slower recovery rates with increasing ratio.

KW - AlGaN

KW - GaN

KW - H2 sensor

KW - HEMT

KW - high temperature

KW - sensor layout

UR - http://www.scopus.com/inward/record.url?scp=85044322317&partnerID=8YFLogxK

U2 - 10.1109/ICSENS.2017.8234419

DO - 10.1109/ICSENS.2017.8234419

M3 - Conference contribution

AN - SCOPUS:85044322317

SN - 978-1-5090-1013-4

SP - 1

EP - 3

BT - Proceedings of IEEE Sensors Conference 2017

PB - IEEE

CY - Piscataway, NJ

T2 - IEEE SENSORS 2017

Y2 - 29 October 2017 through 1 November 2017

ER -

Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Abstract

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Keywords

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