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Quantum Transport Properties of Industrial Si 28 / Si O2 28. / Sabbagh, D.; Massa, L.; Amitonov, S. V.; Boter, J. M.; Droulers, G.; Eenink, H. G.J.; Veldhorst, M.; Vandersypen, L. M.K.; Scappucci, G.

In: Physical Review Applied, Vol. 12, No. 1, 014013, 2019.

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@article{8177a142ae8043a49b5c6459383aab44,
title = "Quantum Transport Properties of Industrial Si 28 / Si O2 28",
abstract = "We investigate the structural and quantum transport properties of isotopically enriched Si28/SiO228 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92{\%}. Hall-bar transistors with an oxide stack comprising 10 nm of Si28O2 and 17 nm of Al2O3 (equivalent oxide thickness of 17 nm) are fabricated in an academic cleanroom. A critical density for conduction of 1.75×1011cm-2 and a peak mobility of 9800cm2/Vs are measured at a temperature of 1.7 K. The Si28/SiO228 interface is characterized by a roughness of Δ=0.4nm and a correlation length of Λ=3.4nm. An upper bound for valley splitting energy of 480μeV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale Si28/SiO228 as a promising material platform to manufacture industrial spin qubits.",
author = "D. Sabbagh and L. Massa and Amitonov, {S. V.} and Boter, {J. M.} and G. Droulers and Eenink, {H. G.J.} and M. Veldhorst and Vandersypen, {L. M.K.} and G. Scappucci",
year = "2019",
doi = "10.1103/PhysRevApplied.12.014013",
language = "English",
volume = "12",
journal = "Physical Review Applied",
issn = "2331-7019",
publisher = "American Physical Society",
number = "1",

}

RIS

TY - JOUR

T1 - Quantum Transport Properties of Industrial Si 28 / Si O2 28

AU - Sabbagh, D.

AU - Massa, L.

AU - Amitonov, S. V.

AU - Boter, J. M.

AU - Droulers, G.

AU - Eenink, H. G.J.

AU - Veldhorst, M.

AU - Vandersypen, L. M.K.

AU - Scappucci, G.

PY - 2019

Y1 - 2019

N2 - We investigate the structural and quantum transport properties of isotopically enriched Si28/SiO228 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92%. Hall-bar transistors with an oxide stack comprising 10 nm of Si28O2 and 17 nm of Al2O3 (equivalent oxide thickness of 17 nm) are fabricated in an academic cleanroom. A critical density for conduction of 1.75×1011cm-2 and a peak mobility of 9800cm2/Vs are measured at a temperature of 1.7 K. The Si28/SiO228 interface is characterized by a roughness of Δ=0.4nm and a correlation length of Λ=3.4nm. An upper bound for valley splitting energy of 480μeV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale Si28/SiO228 as a promising material platform to manufacture industrial spin qubits.

AB - We investigate the structural and quantum transport properties of isotopically enriched Si28/SiO228 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92%. Hall-bar transistors with an oxide stack comprising 10 nm of Si28O2 and 17 nm of Al2O3 (equivalent oxide thickness of 17 nm) are fabricated in an academic cleanroom. A critical density for conduction of 1.75×1011cm-2 and a peak mobility of 9800cm2/Vs are measured at a temperature of 1.7 K. The Si28/SiO228 interface is characterized by a roughness of Δ=0.4nm and a correlation length of Λ=3.4nm. An upper bound for valley splitting energy of 480μeV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale Si28/SiO228 as a promising material platform to manufacture industrial spin qubits.

UR - http://www.scopus.com/inward/record.url?scp=85073645710&partnerID=8YFLogxK

U2 - 10.1103/PhysRevApplied.12.014013

DO - 10.1103/PhysRevApplied.12.014013

M3 - Article

VL - 12

JO - Physical Review Applied

T2 - Physical Review Applied

JF - Physical Review Applied

SN - 2331-7019

IS - 1

M1 - 014013

ER -

ID: 64925102