Reliability issues in RRAM ternary memories affected by variability and aging mechanisms

Antonio Rubio; Manuel Escudero; Peyman Pouyan

doi:10.1109/IOLTS.2017.8046238

Reliability issues in RRAM ternary memories affected by variability and aging mechanisms

Antonio Rubio, Manuel Escudero, Peyman Pouyan

Computer Engineering

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

Abstract

Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime.

Original language	English
Title of host publication	2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	90-92
Number of pages	3
ISBN (Electronic)	978-1-5386-0352-9
DOIs	https://doi.org/10.1109/IOLTS.2017.8046238
Publication status	Published - 2017
Event	23rd IEEE International Symposium on On-Line Testing and Robust System Design - Hotel Makedonia Palace, Thessaloniki, Greece Duration: 3 Jul 2017 → 5 Jul 2017 Conference number: 23 http://tima.univ-grenoble-alpes.fr/conferences/iolts/iolts17/

Conference

Conference	23rd IEEE International Symposium on On-Line Testing and Robust System Design
Abbreviated title	IOLTS 2017
Country/Territory	Greece
City	Thessaloniki
Period	3/07/17 → 5/07/17
Internet address	http://tima.univ-grenoble-alpes.fr/conferences/iolts/iolts17/

Keywords

RRAM devices
ternary memories
variability
endurance
aging
adaptive mechanisms

Access to Document

10.1109/IOLTS.2017.8046238

Cite this

@inproceedings{9cc80f39fcc94ecbb74b60265403ccbe,

title = "Reliability issues in RRAM ternary memories affected by variability and aging mechanisms",

abstract = "Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime.",

keywords = "RRAM devices, ternary memories, variability, endurance, aging, adaptive mechanisms ",

author = "Antonio Rubio and Manuel Escudero and Peyman Pouyan",

year = "2017",

doi = "10.1109/IOLTS.2017.8046238",

language = "English",

pages = "90--92",

booktitle = "2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)",

publisher = "IEEE",

address = "United States",

note = "23rd IEEE International Symposium on On-Line Testing and Robust System Design, IOLTS 2017 ; Conference date: 03-07-2017 Through 05-07-2017",

url = "http://tima.univ-grenoble-alpes.fr/conferences/iolts/iolts17/",

}

Rubio, A, Escudero, M & Pouyan, P 2017, Reliability issues in RRAM ternary memories affected by variability and aging mechanisms. in 2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS). IEEE, Piscataway, NJ, pp. 90-92, 23rd IEEE International Symposium on On-Line Testing and Robust System Design, Thessaloniki, Greece, 3/07/17. https://doi.org/10.1109/IOLTS.2017.8046238

Reliability issues in RRAM ternary memories affected by variability and aging mechanisms. / Rubio, Antonio; Escudero, Manuel; Pouyan, Peyman.
2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS). Piscataway, NJ: IEEE, 2017. p. 90-92.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Reliability issues in RRAM ternary memories affected by variability and aging mechanisms

AU - Rubio, Antonio

AU - Escudero, Manuel

AU - Pouyan, Peyman

N1 - Conference code: 23

PY - 2017

Y1 - 2017

N2 - Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime.

AB - Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime.

KW - RRAM devices

KW - ternary memories

KW - variability

KW - endurance

KW - aging

KW - adaptive mechanisms

U2 - 10.1109/IOLTS.2017.8046238

DO - 10.1109/IOLTS.2017.8046238

M3 - Conference contribution

SP - 90

EP - 92

BT - 2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)

PB - IEEE

CY - Piscataway, NJ

T2 - 23rd IEEE International Symposium on On-Line Testing and Robust System Design

Y2 - 3 July 2017 through 5 July 2017

ER -

Reliability issues in RRAM ternary memories affected by variability and aging mechanisms

Abstract

Conference

Keywords

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Cite this