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Reliability issues in RRAM ternary memories affected by variability and aging mechanisms. / Rubio, Antonio; Escudero, Manuel; Pouyan, Peyman.

2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS). Piscataway, NJ : IEEE, 2017. p. 90-92.

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Harvard

Rubio, A, Escudero, M & Pouyan, P 2017, Reliability issues in RRAM ternary memories affected by variability and aging mechanisms. in 2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS). IEEE, Piscataway, NJ, pp. 90-92, 23rd IEEE International Symposium on On-Line Testing and Robust System Design, Thessaloniki, Greece, 3/07/17. https://doi.org/10.1109/IOLTS.2017.8046238

APA

Rubio, A., Escudero, M., & Pouyan, P. (2017). Reliability issues in RRAM ternary memories affected by variability and aging mechanisms. In 2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS) (pp. 90-92). Piscataway, NJ: IEEE. https://doi.org/10.1109/IOLTS.2017.8046238

Vancouver

Rubio A, Escudero M, Pouyan P. Reliability issues in RRAM ternary memories affected by variability and aging mechanisms. In 2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS). Piscataway, NJ: IEEE. 2017. p. 90-92 https://doi.org/10.1109/IOLTS.2017.8046238

Author

Rubio, Antonio ; Escudero, Manuel ; Pouyan, Peyman. / Reliability issues in RRAM ternary memories affected by variability and aging mechanisms. 2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS). Piscataway, NJ : IEEE, 2017. pp. 90-92

BibTeX

@inproceedings{9cc80f39fcc94ecbb74b60265403ccbe,
title = "Reliability issues in RRAM ternary memories affected by variability and aging mechanisms",
abstract = "Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime.",
keywords = "RRAM devices, ternary memories, variability, endurance, aging, adaptive mechanisms",
author = "Antonio Rubio and Manuel Escudero and Peyman Pouyan",
year = "2017",
doi = "10.1109/IOLTS.2017.8046238",
language = "English",
pages = "90--92",
booktitle = "2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)",
publisher = "IEEE",
address = "United States",

}

RIS

TY - GEN

T1 - Reliability issues in RRAM ternary memories affected by variability and aging mechanisms

AU - Rubio, Antonio

AU - Escudero, Manuel

AU - Pouyan, Peyman

PY - 2017

Y1 - 2017

N2 - Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime.

AB - Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime.

KW - RRAM devices

KW - ternary memories

KW - variability

KW - endurance

KW - aging

KW - adaptive mechanisms

U2 - 10.1109/IOLTS.2017.8046238

DO - 10.1109/IOLTS.2017.8046238

M3 - Conference contribution

SP - 90

EP - 92

BT - 2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)

PB - IEEE

CY - Piscataway, NJ

ER -

ID: 26737017