Reverse biasing and breakdown behavior of PureB diodes

L Qi; KRC Mok; M Aminian; TLM Scholtes; E Charbon; LK Nanver

doi:10.1109/IWJT.2013.6644508

Reverse biasing and breakdown behavior of PureB diodes

L Qi, KRC Mok, M Aminian, TLM Scholtes, E Charbon, LK Nanver

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Original language	English
Title of host publication	Extended abstracts of the 13th International Workshop on Junction Technology
Editors	K Tsutsui, Z Li, I Mizushima
Place of Publication	Tokyo, Japan
Publisher	JSAP
Pages	70-73
Number of pages	4
ISBN (Print)	978-1-4799-0578-2
DOIs	https://doi.org/10.1109/IWJT.2013.6644508
Publication status	Published - 2013
Event	IWJT 2013, Kyoto, Japan - Tokyo, Japan Duration: 6 Jun 2013 → 7 Jun 2013

Publication series

Name
Publisher	JSAP

Conference

Conference	IWJT 2013, Kyoto, Japan
Period	6/06/13 → 7/06/13

Bibliographical note

Harvest

Access to Document

10.1109/IWJT.2013.6644508

Cite this

@inproceedings{1a5ce167f0174a3387ef9088ab40e6d6,

title = "Reverse biasing and breakdown behavior of PureB diodes",

author = "L Qi and KRC Mok and M Aminian and TLM Scholtes and E Charbon and LK Nanver",

note = "Harvest; IWJT 2013, Kyoto, Japan ; Conference date: 06-06-2013 Through 07-06-2013",

year = "2013",

doi = "10.1109/IWJT.2013.6644508",

language = "English",

isbn = "978-1-4799-0578-2",

publisher = "JSAP",

pages = "70--73",

editor = "K Tsutsui and Z Li and I Mizushima",

booktitle = "Extended abstracts of the 13th International Workshop on Junction Technology",

}

Reverse biasing and breakdown behavior of PureB diodes. / Qi, L; Mok, KRC; Aminian, M et al.
Extended abstracts of the 13th International Workshop on Junction Technology. ed. / K Tsutsui; Z Li; I Mizushima. Tokyo, Japan: JSAP, 2013. p. 70-73.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Reverse biasing and breakdown behavior of PureB diodes

AU - Qi, L

AU - Mok, KRC

AU - Aminian, M

AU - Scholtes, TLM

AU - Charbon, E

AU - Nanver, LK

N1 - Harvest

PY - 2013

Y1 - 2013

U2 - 10.1109/IWJT.2013.6644508

DO - 10.1109/IWJT.2013.6644508

M3 - Conference contribution

SN - 978-1-4799-0578-2

SP - 70

EP - 73

BT - Extended abstracts of the 13th International Workshop on Junction Technology

A2 - Tsutsui, K

A2 - Li, Z

A2 - Mizushima, I

PB - JSAP

CY - Tokyo, Japan

T2 - IWJT 2013, Kyoto, Japan

Y2 - 6 June 2013 through 7 June 2013

ER -