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DOI

  • Yue Sun
  • Xuanwu Kang
  • Yingkui Zheng
  • Jiang Lu
  • Xiaoli Tian
  • Ke Wei
  • Hao Wu
  • Wenbo Wang
  • Xinyu Liu
  • Guoqi Zhang
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.
Original languageEnglish
Article number575
Pages (from-to)1-15
Number of pages15
JournalElectronics (Switzerland)
Volume8
Issue number5
DOIs
Publication statusPublished - 2019

    Research areas

  • Edge termination techniques, GaN, Schottky barrier diode (SBD), Vertical power devices

ID: 56047019