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Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs). / Sun, Yue; Kang, Xuanwu; Zheng, Yingkui; Lu, Jiang; Tian, Xiaoli; Wei, Ke; Wu, Hao; Wang, Wenbo; Liu, Xinyu; Zhang, Guoqi.

In: Electronics (Switzerland), Vol. 8, No. 5, 575, 2019, p. 1-15.

Research output: Contribution to journalReview articleScientificpeer-review

Harvard

Sun, Y, Kang, X, Zheng, Y, Lu, J, Tian, X, Wei, K, Wu, H, Wang, W, Liu, X & Zhang, G 2019, 'Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)' Electronics (Switzerland), vol. 8, no. 5, 575, pp. 1-15. https://doi.org/10.3390/electronics8050575

APA

Sun, Y., Kang, X., Zheng, Y., Lu, J., Tian, X., Wei, K., ... Zhang, G. (2019). Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs). Electronics (Switzerland), 8(5), 1-15. [575]. https://doi.org/10.3390/electronics8050575

Vancouver

Sun Y, Kang X, Zheng Y, Lu J, Tian X, Wei K et al. Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs). Electronics (Switzerland). 2019;8(5):1-15. 575. https://doi.org/10.3390/electronics8050575

Author

Sun, Yue ; Kang, Xuanwu ; Zheng, Yingkui ; Lu, Jiang ; Tian, Xiaoli ; Wei, Ke ; Wu, Hao ; Wang, Wenbo ; Liu, Xinyu ; Zhang, Guoqi. / Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs). In: Electronics (Switzerland). 2019 ; Vol. 8, No. 5. pp. 1-15.

BibTeX

@article{6db72bfdc8a54cc3a63920768c8a0863,
title = "Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)",
abstract = "Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.",
keywords = "Edge termination techniques, GaN, Schottky barrier diode (SBD), Vertical power devices",
author = "Yue Sun and Xuanwu Kang and Yingkui Zheng and Jiang Lu and Xiaoli Tian and Ke Wei and Hao Wu and Wenbo Wang and Xinyu Liu and Guoqi Zhang",
year = "2019",
doi = "10.3390/electronics8050575",
language = "English",
volume = "8",
pages = "1--15",
journal = "Electronics (Switzerland)",
issn = "2079-9292",
publisher = "Multidisciplinary Digital Publishing Institute",
number = "5",

}

RIS

TY - JOUR

T1 - Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)

AU - Sun, Yue

AU - Kang, Xuanwu

AU - Zheng, Yingkui

AU - Lu, Jiang

AU - Tian, Xiaoli

AU - Wei, Ke

AU - Wu, Hao

AU - Wang, Wenbo

AU - Liu, Xinyu

AU - Zhang, Guoqi

PY - 2019

Y1 - 2019

N2 - Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

AB - Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

KW - Edge termination techniques

KW - GaN

KW - Schottky barrier diode (SBD)

KW - Vertical power devices

UR - http://www.scopus.com/inward/record.url?scp=85069735448&partnerID=8YFLogxK

U2 - 10.3390/electronics8050575

DO - 10.3390/electronics8050575

M3 - Review article

VL - 8

SP - 1

EP - 15

JO - Electronics (Switzerland)

T2 - Electronics (Switzerland)

JF - Electronics (Switzerland)

SN - 2079-9292

IS - 5

M1 - 575

ER -

ID: 56047019