Abstract
Emerging technologies such as RRAMs are attracting significant attention, due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. However, critical causes of hardware reliability failures (such as process variation due to their nano-scale structure) have gained considerable importance for having acceptable memory yields. Such vulnerabilities make it essential to investigate new robust design strategies at the circuit and system level. In this paper we have first reviewed the RRAM variability phenomenon and the variation tolerant techniques at the circuit level. Then we have analyzed the impact of variability on memory reliability and have proposed a variation-monitoring circuit that discerns the reliable memory cells affected by process variability.
Original language | English |
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Title of host publication | 26th International Workshop on Power and Timing Modeling, Optimization and Simulation, PATMOS 2016 |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 141-146 |
Number of pages | 6 |
ISBN (Electronic) | 978-1-5090-0733-2 |
DOIs | |
Publication status | Published - 2016 |
Event | 26th International Workshop on Power and Timing Modeling, Optimization and Simulation, PATMOS 2016 - Bremen, Germany Duration: 21 Sept 2016 → 23 Sept 2016 |
Workshop
Workshop | 26th International Workshop on Power and Timing Modeling, Optimization and Simulation, PATMOS 2016 |
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Country/Territory | Germany |
City | Bremen |
Period | 21/09/16 → 23/09/16 |
Other | PATMOS 2016 is co-located with VARI 2016 |
Keywords
- RRAM
- Reliability
- Process Variability
- Mitagation
- Emerging Memory
- Resistive Memory