• Yang Liu
  • Xianping Chen
  • ZhaoHui Zhao
  • ZhiGang Li
  • CaiTao Lu
  • JingGuo Zhang
  • Huaiyu Ye
  • Sau Wee Koh
  • LiGen Wang
  • Guoqi Zhang

A systematic study of discrete SiC MOSFETs' reliability under High Temperature stress has been carried out. High Temperature stress is performed in this work to characterize the threshold voltage instability. To investigate the degradation mechanism of devices, simulation according to the structure of MOSFET cell has been performed. The result shows that the threshold voltages change trends of both MOSFETs are the same, including drop-down period at very early time due to a decrease of doping concentration at channel region and gradual raise-up period at in the rest of time resulting from decline of interface charge.

Original languageEnglish
Title of host publicationProceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018
EditorsF. Xiao, J. Wang, L. Chen, T. Ye
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages347-350
Number of pages4
ISBN (Electronic)978-1-5386-6386-8
DOIs
Publication statusPublished - 2018
EventICEPT 2018: 19th International Conference on Electronic Packaging Technology - Shanghai, China
Duration: 8 Aug 201811 Aug 2018
Conference number: 19

Conference

ConferenceICEPT 2018
CountryChina
CityShanghai
Period8/08/1811/08/18

    Research areas

  • doping concentration, High Temperature, interface charge, SiC MOSFET, simulation, threshold voltage instability

ID: 47551184