Spin-Orbit Semimetal SrIrO3 in the Two-Dimensional Limit

D. J. Groenendijk; C. Autieri; J. Girovsky; M. Carmen Martinez-Velarte; N. Manca; G. Mattoni; Ana M R V L Monteiro; N. Gauquelin; J Verbeeck; A. F. Otte; M. Gabay; S. Picozzi; A. D. Caviglia

doi:10.1103/PhysRevLett.119.256403

Spin-Orbit Semimetal SrIrO3 in the Two-Dimensional Limit

D. J. Groenendijk, C. Autieri, J. Girovsky, M. Carmen Martinez-Velarte, N. Manca, G. Mattoni, Ana M R V L Monteiro, N. Gauquelin, J Verbeeck, A. F. Otte, M. Gabay, S. Picozzi, A. D. Caviglia

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Abstract

We investigate the thickness-dependent electronic properties of ultrathin SrIrO3 and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO3 is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO3 requires antiferromagnetic order.

Original language	English
Article number	256403
Number of pages	6
Journal	Physical Review Letters
Volume	119
Issue number	25
DOIs	https://doi.org/10.1103/PhysRevLett.119.256403
Publication status	Published - 22 Dec 2017

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title = "Spin-Orbit Semimetal SrIrO3 in the Two-Dimensional Limit",

abstract = "We investigate the thickness-dependent electronic properties of ultrathin SrIrO3 and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO3 is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO3 requires antiferromagnetic order.",

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AU - Groenendijk, D. J.

AU - Autieri, C.

AU - Girovsky, J.

AU - Martinez-Velarte, M. Carmen

AU - Manca, N.

AU - Mattoni, G.

AU - Monteiro, Ana M R V L

AU - Gauquelin, N.

AU - Verbeeck, J

AU - Otte, A. F.

AU - Gabay, M.

AU - Picozzi, S.

AU - Caviglia, A. D.

PY - 2017/12/22

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N2 - We investigate the thickness-dependent electronic properties of ultrathin SrIrO3 and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO3 is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO3 requires antiferromagnetic order.

AB - We investigate the thickness-dependent electronic properties of ultrathin SrIrO3 and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO3 is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO3 requires antiferromagnetic order.

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Spin-Orbit Semimetal SrIrO3 in the Two-Dimensional Limit

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