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State of the Art and Challenges for Test and Reliability of Emerging Non-volatile Resistive Memories. / Vatajelu, Elena Ioana; Pouyan, Peyman; Hamdioui, Said.

In: International Journal of Circuit Theory and Applications, 2017, p. 1-25.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Vatajelu, EI, Pouyan, P & Hamdioui, S 2017, 'State of the Art and Challenges for Test and Reliability of Emerging Non-volatile Resistive Memories' International Journal of Circuit Theory and Applications, pp. 1-25. https://doi.org/10.1002/cta.2418

APA

Vatajelu, E. I., Pouyan, P., & Hamdioui, S. (2017). State of the Art and Challenges for Test and Reliability of Emerging Non-volatile Resistive Memories. International Journal of Circuit Theory and Applications, 1-25. https://doi.org/10.1002/cta.2418

Vancouver

Author

Vatajelu, Elena Ioana ; Pouyan, Peyman ; Hamdioui, Said. / State of the Art and Challenges for Test and Reliability of Emerging Non-volatile Resistive Memories. In: International Journal of Circuit Theory and Applications. 2017 ; pp. 1-25.

BibTeX

@article{0bf21d7d993e42ffaa2caa04f0809675,
title = "State of the Art and Challenges for Test and Reliability of Emerging Non-volatile Resistive Memories",
abstract = "The power and reliability issues of today's memories (static and dynamic RAMs) reduce the advances achieved by their implementation in scaled technology. There are several emergent memory technologies that address the technical constraints of today's memories, among which the most promising solutions are the resistance-based memories, such as phase change memories, the redox-based resistive memories, and the spin-transfer torque magnetic memories. These technologies are facing various challenges that have to be addressed to render them efficient in today's applications. Until recently, research focus was on the design for performance and power efficiency, but lately, the test and reliability issues of these devices have become of major concern to the community. This paper presents an overview of the challenges and proposed test and reliability boost solutions developed to suit the needs of the emerging memories under analysis. It underlines (1) the unique faults that occur in the memory cell due to known issues in the emerging storage devices, (2) the dedicated solutions developed for efficient testing of the emerging memories under study, (3) the main reliability concerns related to the emerging storage devices, and (4) the design solutions targeted at mitigating these reliability issues.",
keywords = "PCM, RRAM, MRAM, fault modeling, test, DfT, DfR, reliability, emerging memory",
author = "Vatajelu, {Elena Ioana} and Peyman Pouyan and Said Hamdioui",
year = "2017",
doi = "10.1002/cta.2418",
language = "English",
pages = "1--25",
journal = "International Journal of Circuit Theory and Applications",
issn = "0098-9886",
publisher = "John Wiley & Sons",

}

RIS

TY - JOUR

T1 - State of the Art and Challenges for Test and Reliability of Emerging Non-volatile Resistive Memories

AU - Vatajelu, Elena Ioana

AU - Pouyan, Peyman

AU - Hamdioui, Said

PY - 2017

Y1 - 2017

N2 - The power and reliability issues of today's memories (static and dynamic RAMs) reduce the advances achieved by their implementation in scaled technology. There are several emergent memory technologies that address the technical constraints of today's memories, among which the most promising solutions are the resistance-based memories, such as phase change memories, the redox-based resistive memories, and the spin-transfer torque magnetic memories. These technologies are facing various challenges that have to be addressed to render them efficient in today's applications. Until recently, research focus was on the design for performance and power efficiency, but lately, the test and reliability issues of these devices have become of major concern to the community. This paper presents an overview of the challenges and proposed test and reliability boost solutions developed to suit the needs of the emerging memories under analysis. It underlines (1) the unique faults that occur in the memory cell due to known issues in the emerging storage devices, (2) the dedicated solutions developed for efficient testing of the emerging memories under study, (3) the main reliability concerns related to the emerging storage devices, and (4) the design solutions targeted at mitigating these reliability issues.

AB - The power and reliability issues of today's memories (static and dynamic RAMs) reduce the advances achieved by their implementation in scaled technology. There are several emergent memory technologies that address the technical constraints of today's memories, among which the most promising solutions are the resistance-based memories, such as phase change memories, the redox-based resistive memories, and the spin-transfer torque magnetic memories. These technologies are facing various challenges that have to be addressed to render them efficient in today's applications. Until recently, research focus was on the design for performance and power efficiency, but lately, the test and reliability issues of these devices have become of major concern to the community. This paper presents an overview of the challenges and proposed test and reliability boost solutions developed to suit the needs of the emerging memories under analysis. It underlines (1) the unique faults that occur in the memory cell due to known issues in the emerging storage devices, (2) the dedicated solutions developed for efficient testing of the emerging memories under study, (3) the main reliability concerns related to the emerging storage devices, and (4) the design solutions targeted at mitigating these reliability issues.

KW - PCM

KW - RRAM

KW - MRAM

KW - fault modeling

KW - test

KW - DfT

KW - DfR

KW - reliability

KW - emerging memory

U2 - 10.1002/cta.2418

DO - 10.1002/cta.2418

M3 - Article

SP - 1

EP - 25

JO - International Journal of Circuit Theory and Applications

T2 - International Journal of Circuit Theory and Applications

JF - International Journal of Circuit Theory and Applications

SN - 0098-9886

ER -

ID: 28676677