Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

P. A. T Hart; M. Babaie; E. Charbon; A. Vladimirescu; F. Sebastiano

doi:10.1109/ESSDERC.2019.8901745

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

P. A. T Hart, M. Babaie, E. Charbon, A. Vladimirescu, F. Sebastiano

Electronics

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

20 Citations (Scopus)

Abstract

Cryogenic device models are essential for the reliable design of the cryo-CMOS interface that enables large-scale quantum computers. In this paper, mismatch characterization and modeling of a 40-nm bulk CMOS process over the 4.2-300 K temperature range is studied, towards an all-operating-region mismatch model. An overall increase of variability is shown, in particular in the subthreshold region at cryogenic temperatures due to a dramatic increase of the subthreshold slope mismatch. Mismatch in strong inversion is modeled by the Croon model while the weak-inversion region is modeled by taking subthresh-old slope variability into account. This results in the first model capable of predicting mismatch over the whole range of operating regions and temperatures.

Original language	English
Title of host publication	49th European Solid-State Device Research Conference, ESSDERC 2019
Publisher	Editions Frontieres
Pages	98-101
Number of pages	4
Volume	2019-September
ISBN (Electronic)	9781728115399
DOIs	https://doi.org/10.1109/ESSDERC.2019.8901745
Publication status	Published - 1 Sept 2019
Event	49th European Solid-State Device Research Conference, ESSDERC 2019 - Cracow, Poland Duration: 23 Sept 2019 → 26 Sept 2019

Conference

Conference	49th European Solid-State Device Research Conference, ESSDERC 2019
Country/Territory	Poland
City	Cracow
Period	23/09/19 → 26/09/19

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10.1109/ESSDERC.2019.8901745

Cite this

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title = "Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures",

abstract = "Cryogenic device models are essential for the reliable design of the cryo-CMOS interface that enables large-scale quantum computers. In this paper, mismatch characterization and modeling of a 40-nm bulk CMOS process over the 4.2-300 K temperature range is studied, towards an all-operating-region mismatch model. An overall increase of variability is shown, in particular in the subthreshold region at cryogenic temperatures due to a dramatic increase of the subthreshold slope mismatch. Mismatch in strong inversion is modeled by the Croon model while the weak-inversion region is modeled by taking subthresh-old slope variability into account. This results in the first model capable of predicting mismatch over the whole range of operating regions and temperatures.",

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T Hart, PA, Babaie, M, Charbon, E, Vladimirescu, A & Sebastiano, F 2019, Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures. in 49th European Solid-State Device Research Conference, ESSDERC 2019. vol. 2019-September, 8901745, Editions Frontieres, pp. 98-101, 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, 23/09/19. https://doi.org/10.1109/ESSDERC.2019.8901745

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures. / T Hart, P. A.; Babaie, M.; Charbon, E. et al.
49th European Solid-State Device Research Conference, ESSDERC 2019. Vol. 2019-September Editions Frontieres, 2019. p. 98-101 8901745.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

AU - T Hart, P. A.

AU - Babaie, M.

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AB - Cryogenic device models are essential for the reliable design of the cryo-CMOS interface that enables large-scale quantum computers. In this paper, mismatch characterization and modeling of a 40-nm bulk CMOS process over the 4.2-300 K temperature range is studied, towards an all-operating-region mismatch model. An overall increase of variability is shown, in particular in the subthreshold region at cryogenic temperatures due to a dramatic increase of the subthreshold slope mismatch. Mismatch in strong inversion is modeled by the Croon model while the weak-inversion region is modeled by taking subthresh-old slope variability into account. This results in the first model capable of predicting mismatch over the whole range of operating regions and temperatures.

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Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

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