DOI

  • Said Hamdioui
  • Peyman Pouyan
  • Huawei Li
  • Ying Wang
  • Arijit Raychowdhur
  • Insik Yoon
The search for alternative memory technologies has attracted significant attention toward emerging non-volatile memories. Among them, STT-MRAM, PCM, RRAM have shown promising characteristic to gain a position inside the memory hierarchy of computing platforms, and even enable new computing paradigms. However like any other emerging technology these devices are affected by concerns to be resolved before they could become a mainstream. This paper reviews the main reliability and testability challenges of aforementioned emerging non-volatile memories and highlights the main future considerations toward them.
Original languageEnglish
Title of host publication2017 IEEE 26th Asian Test Symposium (ATS)
EditorsL. O’Conner
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages170-178
Number of pages9
ISBN (Electronic)978-1-5386-2437-1
ISBN (Print)978-1-5386-3516-2
DOIs
Publication statusPublished - 2017
EventIEEE 26th Asian Test Symposium : ATS - Taipei City, Taiwan, Province of China
Duration: 27 Nov 201730 Nov 2017

Conference

ConferenceIEEE 26th Asian Test Symposium
CountryTaiwan, Province of China
City Taipei City
Period27/11/1730/11/17

    Research areas

  • STT-MRAM, PCM, RRAM, Test, Reliability

ID: 37937022