Abstract
IGBT device is developed from silicon to wide bandgap semiconductor materials, and its working temperature has reached to 300 °C, so the encapsulation is particularly important. NanoCu paste is investigated under H2 at 300°C. A chip is linked to DBC substrate by nanoCu paste under air with different temperature. Results shows the increase of sintered time temperature effectively reduce the porosity of sintered layer and enhance the strength.
Original language | English |
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Title of host publication | Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018 |
Editors | F. Xiao, J. Wang, L. Chen, T. Ye |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 1476-1478 |
Number of pages | 3 |
ISBN (Electronic) | 978-1-5386-6386-8 |
DOIs | |
Publication status | Published - 2018 |
Event | ICEPT 2018: 19th International Conference on Electronic Packaging Technology - Shanghai, China Duration: 8 Aug 2018 → 11 Aug 2018 Conference number: 19 |
Conference
Conference | ICEPT 2018 |
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Country/Territory | China |
City | Shanghai |
Period | 8/08/18 → 11/08/18 |
Keywords
- die attach
- Nanocopper
- paste
- Power device