Standard

Theory of aluminum metallization corrosion in microelectronics. / van Soestbergen, M; Mavinkurve, A; Rongen, RTH; Jansen, KMB; Ernst, LJ; Zhang, GQ.

In: Electrochimica Acta, Vol. 55, 2010, p. 5459-5469.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

van Soestbergen, M, Mavinkurve, A, Rongen, RTH, Jansen, KMB, Ernst, LJ & Zhang, GQ 2010, 'Theory of aluminum metallization corrosion in microelectronics' Electrochimica Acta, vol. 55, pp. 5459-5469.

APA

van Soestbergen, M., Mavinkurve, A., Rongen, RTH., Jansen, KMB., Ernst, LJ., & Zhang, GQ. (2010). Theory of aluminum metallization corrosion in microelectronics. Electrochimica Acta, 55, 5459-5469.

Vancouver

van Soestbergen M, Mavinkurve A, Rongen RTH, Jansen KMB, Ernst LJ, Zhang GQ. Theory of aluminum metallization corrosion in microelectronics. Electrochimica Acta. 2010;55:5459-5469.

Author

van Soestbergen, M ; Mavinkurve, A ; Rongen, RTH ; Jansen, KMB ; Ernst, LJ ; Zhang, GQ. / Theory of aluminum metallization corrosion in microelectronics. In: Electrochimica Acta. 2010 ; Vol. 55. pp. 5459-5469.

BibTeX

@article{88a15cbb066a4eaea0d6c9680c0946eb,
title = "Theory of aluminum metallization corrosion in microelectronics",
abstract = "We present a time-dependent numerical model for corrosion in microelectronics, focusing on aluminum bondpads, which can be very beneficial for the design as well as the interpretation of reliability data of microelectronics. The model includes charge transport through the polymer microelectronics encapsulant as well as the formation of layers of space charge at all polymer interfaces, which strongly influences the electrochemical charge transfer rate at the polymer¿metal interfaces via the generalized Frumkin¿Butler¿Volmer equation. The system we consider consists of two parallel gold bondwires that are each electrically connected to two aluminum bondpads, which are assumed to contain weak spots in the protective native oxide layer, i.e. pits. This system is encapsulated in an epoxy molding compound, which is the usual low-conductive, and slightly hydrophilic, microelectronic encapsulant. We assume that a cathodic reaction takes place at the gold wires, and an anodic reaction at the weak spots of the aluminum bondpads. Furthermore,weassume the presence of a large excess of inert supporting salt compared to the reactive hydroxyl ions. Numerical calculations were made in a two-dimensional geometry as function of the applied voltage difference between the two wires, the concentration of absorbed moisture in the encapsulation, and the ambient temperature. We show that the model results predict trends similar to the empirical industrial standards for failure of microelectronic products due to corrosion.",
keywords = "academic journal papers, CWTS 0.75 <= JFIS < 2.00",
author = "{van Soestbergen}, M and A Mavinkurve and RTH Rongen and KMB Jansen and LJ Ernst and GQ Zhang",
year = "2010",
language = "English",
volume = "55",
pages = "5459--5469",
journal = "Electrochimica Acta",
issn = "0013-4686",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Theory of aluminum metallization corrosion in microelectronics

AU - van Soestbergen, M

AU - Mavinkurve, A

AU - Rongen, RTH

AU - Jansen, KMB

AU - Ernst, LJ

AU - Zhang, GQ

PY - 2010

Y1 - 2010

N2 - We present a time-dependent numerical model for corrosion in microelectronics, focusing on aluminum bondpads, which can be very beneficial for the design as well as the interpretation of reliability data of microelectronics. The model includes charge transport through the polymer microelectronics encapsulant as well as the formation of layers of space charge at all polymer interfaces, which strongly influences the electrochemical charge transfer rate at the polymer¿metal interfaces via the generalized Frumkin¿Butler¿Volmer equation. The system we consider consists of two parallel gold bondwires that are each electrically connected to two aluminum bondpads, which are assumed to contain weak spots in the protective native oxide layer, i.e. pits. This system is encapsulated in an epoxy molding compound, which is the usual low-conductive, and slightly hydrophilic, microelectronic encapsulant. We assume that a cathodic reaction takes place at the gold wires, and an anodic reaction at the weak spots of the aluminum bondpads. Furthermore,weassume the presence of a large excess of inert supporting salt compared to the reactive hydroxyl ions. Numerical calculations were made in a two-dimensional geometry as function of the applied voltage difference between the two wires, the concentration of absorbed moisture in the encapsulation, and the ambient temperature. We show that the model results predict trends similar to the empirical industrial standards for failure of microelectronic products due to corrosion.

AB - We present a time-dependent numerical model for corrosion in microelectronics, focusing on aluminum bondpads, which can be very beneficial for the design as well as the interpretation of reliability data of microelectronics. The model includes charge transport through the polymer microelectronics encapsulant as well as the formation of layers of space charge at all polymer interfaces, which strongly influences the electrochemical charge transfer rate at the polymer¿metal interfaces via the generalized Frumkin¿Butler¿Volmer equation. The system we consider consists of two parallel gold bondwires that are each electrically connected to two aluminum bondpads, which are assumed to contain weak spots in the protective native oxide layer, i.e. pits. This system is encapsulated in an epoxy molding compound, which is the usual low-conductive, and slightly hydrophilic, microelectronic encapsulant. We assume that a cathodic reaction takes place at the gold wires, and an anodic reaction at the weak spots of the aluminum bondpads. Furthermore,weassume the presence of a large excess of inert supporting salt compared to the reactive hydroxyl ions. Numerical calculations were made in a two-dimensional geometry as function of the applied voltage difference between the two wires, the concentration of absorbed moisture in the encapsulation, and the ambient temperature. We show that the model results predict trends similar to the empirical industrial standards for failure of microelectronic products due to corrosion.

KW - academic journal papers

KW - CWTS 0.75 <= JFIS < 2.00

M3 - Article

VL - 55

SP - 5459

EP - 5469

JO - Electrochimica Acta

T2 - Electrochimica Acta

JF - Electrochimica Acta

SN - 0013-4686

ER -

ID: 1513319