TY - JOUR
T1 - Thermal Management on IGBT Power Electronic Devices and Modules
AU - Qian, Cheng
AU - Mirza Gheytaghi, Amir
AU - Fan, Jiajie
AU - Tang, Hongyu
AU - Sun, Bo
AU - Ye, Huaiyu
AU - Zhang, GuoQi
PY - 2018
Y1 - 2018
N2 - As an increasing attention towards sustainable development of energy and environment, the power electronics (PEs) are gaining more and more attraction on various energy systems. The insulated gate bipolar transistor (IGBT), as one of the PEs with numerous advantages and potentials for development of higher voltage and current ratings, has been used in a board range of applications. However, the continuing miniaturization and rapid increasing power ratings of IGBTs have remarkable high heat flux, which requires complex thermal management. In this paper, studies of the thermal management on IGBTs are generally reviewed including analyzing, comparing, and classifying the results originating from these researches. The thermal models to accurately calculate the dynamic heat dissipation are divided into analytical models, numerical models, and thermal network models, respectively. The thermal resistances of current IGBT modules are also studied. According to the current products on a number of IGBTs, we observe that the junction-to-case thermal resistance generally decreases inversely in terms of the total thermal power. In addition, the cooling solutions of IGBTs are reviewed and the performance of the various solutions are studied and compared. At last, we have proposed a quick and efficient evaluation judgment for the thermal management of the IGBTs depended on the requirements on the junction-to-case thermal resistance and equivalent heat transfer coefficient of the test samples.
AB - As an increasing attention towards sustainable development of energy and environment, the power electronics (PEs) are gaining more and more attraction on various energy systems. The insulated gate bipolar transistor (IGBT), as one of the PEs with numerous advantages and potentials for development of higher voltage and current ratings, has been used in a board range of applications. However, the continuing miniaturization and rapid increasing power ratings of IGBTs have remarkable high heat flux, which requires complex thermal management. In this paper, studies of the thermal management on IGBTs are generally reviewed including analyzing, comparing, and classifying the results originating from these researches. The thermal models to accurately calculate the dynamic heat dissipation are divided into analytical models, numerical models, and thermal network models, respectively. The thermal resistances of current IGBT modules are also studied. According to the current products on a number of IGBTs, we observe that the junction-to-case thermal resistance generally decreases inversely in terms of the total thermal power. In addition, the cooling solutions of IGBTs are reviewed and the performance of the various solutions are studied and compared. At last, we have proposed a quick and efficient evaluation judgment for the thermal management of the IGBTs depended on the requirements on the junction-to-case thermal resistance and equivalent heat transfer coefficient of the test samples.
KW - Power electronics
KW - IGBT
KW - thermal management
KW - cooling
KW - qualifications
KW - OA-Fund TU Delft
UR - https://ieeexplore.ieee.org/document/8258946
U2 - 10.1109/ACCESS.2018.2793300
DO - 10.1109/ACCESS.2018.2793300
M3 - Article
SN - 2169-3536
VL - 6
SP - 12868
EP - 12884
JO - IEEE Access
JF - IEEE Access
ER -