Titanium nitride (TiN) as a gate material in BiCMOS devices for biomedical implants

NS Lawand; HW van Zeijl; PJ French; JJ Briaire; JHM Frijns

doi:10.1109/ICSENS.2013.6688502

Titanium nitride (TiN) as a gate material in BiCMOS devices for biomedical implants

NS Lawand, HW van Zeijl, PJ French, JJ Briaire, JHM Frijns

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

5 Citations (Scopus)

Original language	English
Title of host publication	Proceedings IEEE Sensors 2013
Editors	E Brown, Y Gianchandani, R Trew
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE Society
Pages	1-4
Number of pages	4
ISBN (Print)	978-1-4673-4642-9
DOIs	https://doi.org/10.1109/ICSENS.2013.6688502
Publication status	Published - 2013
Event	IEEE Sensors 2013 - Baltimore, MD, United States Duration: 3 Nov 2013 → 6 Nov 2013

Publication series

Name
Publisher	IEEE

Conference

Conference	IEEE Sensors 2013
Country/Territory	United States
City	Baltimore, MD
Period	3/11/13 → 6/11/13

Access to Document

10.1109/ICSENS.2013.6688502

Cite this

@inproceedings{5b0c2cf97baa487bb50a0b07786318c5,

title = "Titanium nitride (TiN) as a gate material in BiCMOS devices for biomedical implants",

author = "NS Lawand and {van Zeijl}, HW and PJ French and JJ Briaire and JHM Frijns",

year = "2013",

doi = "10.1109/ICSENS.2013.6688502",

language = "English",

isbn = "978-1-4673-4642-9",

publisher = "IEEE Society",

pages = "1--4",

editor = "E Brown and Y Gianchandani and R Trew",

booktitle = "Proceedings IEEE Sensors 2013",

note = "IEEE Sensors 2013 ; Conference date: 03-11-2013 Through 06-11-2013",

}

Lawand, NS, van Zeijl, HW , French, PJ, Briaire, JJ & Frijns, JHM 2013, Titanium nitride (TiN) as a gate material in BiCMOS devices for biomedical implants. in E Brown, Y Gianchandani & R Trew (eds), Proceedings IEEE Sensors 2013. IEEE Society, Piscataway, NJ, USA, pp. 1-4, IEEE Sensors 2013, Baltimore, MD, United States, 3/11/13. https://doi.org/10.1109/ICSENS.2013.6688502

Titanium nitride (TiN) as a gate material in BiCMOS devices for biomedical implants. / Lawand, NS; van Zeijl, HW ; French, PJ et al.
Proceedings IEEE Sensors 2013. ed. / E Brown; Y Gianchandani; R Trew. Piscataway, NJ, USA: IEEE Society, 2013. p. 1-4.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Titanium nitride (TiN) as a gate material in BiCMOS devices for biomedical implants

AU - Lawand, NS

AU - van Zeijl, HW

AU - French, PJ

AU - Briaire, JJ

AU - Frijns, JHM

PY - 2013

Y1 - 2013

U2 - 10.1109/ICSENS.2013.6688502

DO - 10.1109/ICSENS.2013.6688502

M3 - Conference contribution

SN - 978-1-4673-4642-9

SP - 1

EP - 4

BT - Proceedings IEEE Sensors 2013

A2 - Brown, E

A2 - Gianchandani, Y

A2 - Trew, R

PB - IEEE Society

CY - Piscataway, NJ, USA

T2 - IEEE Sensors 2013

Y2 - 3 November 2013 through 6 November 2013

ER -