Abstract
The valence stability parameter (EFf), defined as the difference between the charge transfer energy to the host intrinsic Fermi energy, was used as criterion to analyze the capability of different host materials within the SiAlON class to stabilize divalent thulium. Available data on charge transfer energies and optical bandgap values are reviewed for Si3N4, SiO2, AlN, and Al2O3. In addition, new data on thin films, collected by our gradient sputter deposition and characterization method on silicon and aluminum nitrides (Si0.75xAl1-xN), are reported. These data are sufficient to show that, at least in the nitride subsection of the SiAlON class, divalent thulium is not expected to be stable due to the presence of high EFf values. The use of sub-stoichiometric silicon nitride and oxide is also briefly considered.
Original language | English |
---|---|
Title of host publication | 237th ECS Meeting |
Subtitle of host publication | Nanoscale Luminescent Materials 6 |
Editors | P. Mascher, F. Rosei, D. J. Lockwood |
Publisher | The Institute of Physics Publishing |
Pages | 17-26 |
Volume | 97 |
Edition | 2 |
ISBN (Electronic) | 9781607688907 |
DOIs | |
Publication status | Published - 2020 |
Event | 237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020 - Montreal, Canada Duration: 10 May 2020 → 14 May 2020 |
Conference
Conference | 237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020 |
---|---|
Country/Territory | Canada |
City | Montreal |
Period | 10/05/20 → 14/05/20 |